MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMN1017UCP3-7


MOSFET MOSFETBVDSS: 8V-24V
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Diodes Incorporated 2570
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AUD 0.2693
Multiples of: 1

7.5 A12 V14.1 mOhmsN - Channel 400 mV- 55 C+ 150 C1.47 WSmd/SmtX3 - DSN1010 - 3Cut TapeSi1 Channel8 V16 nCEnhancement  
IRLZ44NPBF


MOSFET N Trench 55V 47A 2V @ 250uA 22 mΩ @ 25A,10V TO-220 (TO-220-3) RoHS
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Infineon 2570
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AUD 0.7276
Multiples of: 50

41 A55 V35 mOhmsN - Channel    83 WThrough HoleTO - 220 - 3TubeSi1 Channel16 V32 nC   
RD3P100SNFRATL


MOSFET Nch 100V Vdss 10A ID TO-252DPAK; TO-252
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ROHM 2570
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AUD 1.0261
Multiples of: 1

10 A100 V133 mOhmsN - Channel 1 V- 55 C+ 150 C20 WSmd/SmtTO - 252 - 3Cut Tape 1 Channel20 V18 nCEnhancement  
STF8N80K5


STMicroelectronics MOSFET N-Ch 800V 0.76 Ohm 6AMDmesh K5
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STMicroelectronics 2570
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AUD 1.6565
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6 A800 V950 mOhmsN - Channel30 V4 V- 55 C+ 150 C25 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V16.5 nCEnhancement Mdmesh
RD3L140SPTL1


MOSFET Pch -60V -14A TO-252(DPAK)
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ROHM 2568
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AUD 1.0901
Multiples of: 1

14 A60 V60 mOhmsP - Channel 3 V- 55 C+ 150 C20 WSmd/SmtDPAK - 3Cut TapeSi1 Channel- 10 V27 nCEnhancement  
EFC6605R-TR


MOSFET NCH+NCH 10A 24V 2.5V DRIVE
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ON Semiconductor 2567
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AUD 0.2906
Multiples of: 1

10 A20 V13.3 mOhmsN - Channel10 V500 mV to 1.3 V- 55 C+ 150 C1.6 WSmd/SmtEFCP - 6ReelSi2 Channel10 V19.8 nC   
SIHFR1N60A-GE3


MOSFET 600V Vds TO-252 DPAK
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Vishay 2567
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AUD 0.1626
Multiples of: 1

1.4 A600 V N - Channel 2 V- 55 C+ 150 C36 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel30 V14 nCEnhancement  
DMTH4004LPS-13


MOSFET MOSFET BVDSS: 31V-40V
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Diodes Incorporated 2567
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AUD 0.9276
Multiples of: 1

         Smd/SmtPowerdi5060 - 8Cut TapeSi      
FDN359BN


30V 5.8A 30mΩ@10V 1.4V null SOT-23 MOSFETs ROHS
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HXY MOS 2555
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AUD 0.055
Multiples of: 5

                   
PMN50EPEX


MOSFET PMN50EPE/SOT457/SC-74
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Nexperia 749
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AUD 0.7326
Multiples of: 1

                   
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