MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI1902CDL-T1-GE3


MOSFET 20V Vds 12V Vgs SC70-6
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Vishay 2774
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AUD 0.131
Multiples of: 5

1.1 A20 V235 mOhmsN - Channel 600 mV- 55 C+ 150 C420 mWSmd/SmtSOT - 363 - 6Cut TapeSi2 Channel4.5 V2 nCEnhancement Trenchfet
WSP9936


20V 8A 15mΩ@4.5V,8A 2W 750mV@250uA 2 N-Channel SOP-8 MOSFETs ROHS
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Winsok 2774
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AUD 0.1648
Multiples of: 5

                   
ZVN3310FTA


MOSFET N-Channel - 100V - 100mA - 330mW - Surface Mount - SOT-23-3.
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Diodes Incorporated 2774
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AUD 0.2122
Multiples of: 5

100 mA100 V10 OhmsN - Channel 800 mV- 55 C+ 150 C330 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
HSU15P15


150V 15A 338mΩ@10V,5A 90W 4V@250uA P Channel TO-252 MOSFETs ROHS
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HUASHUO 2774
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AUD 0.3065
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R8002CND3FRATL


N-Channel 800V 2A (Tc) 69W (Tc) Surface Mount TO-252
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ROHM 2771
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AUD 2.2328
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          TO - 252 - 3 , DPAK (2 Leads + Tab) , SC - 63Tape And ReelMosfet (Metal Oxide)      
FDS8638


MOSFET 40/20V, N Chan PowerTrench
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ON Semiconductor 2770
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AUD 0.8948
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18 A40 V4.3 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtSO - 8Cut TapeSi1 Channel20 V Enhancement Powertrench
PMPB215ENEA/FX


Transistor: N-MOSFET; unipolar; 80V; 1.2A; Idm:7.6A; 1.6W
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Nexperia 2761
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AUD 0.6687
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AO4828-MS


SOP-8 MOSFETs ROHS
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MSKSEMI 2745
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AUD 0.1598
Multiples of: 5

                   
AOD2606-MS


60V 80A 104W 6mΩ@10V,45A 1.4V@250uA 180pF@25V N Channel 2680pF@25V 33nC@4.5V -55℃~+150℃@(Tj) TO-252 MOSFETs ROHS
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MSKSEMI 2215
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AUD 0.4407
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QH8KE6TCR


MOSFETs 100V 4A, Dual Nch+Nch, TSMT8, Power MOSFET : QH8KE6 is a low on-resistance MOSFET ideal for Switching and Motor drives applications.
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ROHM 136
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AUD 0.5533
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4 A100 V56 mOhmsN - Channel 2.5 V- 55 C+ 150 C1.5 WSMD/SMTT SMT - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V6.7 nCEnhancement  
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