MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPT026N12NM6ATMA1


MOSFETs TRENCH >=100V
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Infineon 6621
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AUD 4.3343
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           Reel , Cut Tape       
DMN3350LDW-7


MOSFETs MOSFET BVDSS: 25V~30V SOT363 T and R 3K
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Diodes Incorporated 2741
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AUD 0.0575
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           Reel , Cut TapeSi      
TPE03K4S6


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 2740
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AUD 0.1664
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IPS060N03LGAKMA1


Trans MOSFET N-CH 30V 50A 3-Pin(3+Tab) TO-251 Tube
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Infineon 2740
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AUD 0.3431
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50 A30 V5 mOhmsn - channel 1 V- 55 C+ 175 C56 Wthrough holeTO - 251 - 3Tubesi1 channel20 V30 nCenhancement optimos
XSM6K519NW,LXHF


MOSFETs N-ch MOSFET, 40 V, 8.0 A, 0.0118 ohm at 10V, DFN2020B(WF)
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Toshiba 2740
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AUD 0.3694
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8 A40 V17.8 mOhmsN - Channel 2.5 V + 175 C4.3 WSMD/SMTDFN - 6Reel , Cut TapeSi1 Channel20 V6.5 nCEnhancement  
RQ3E100ATTB


MOSFET PCH -30V -31A POWER
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ROHM 2740
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AUD 0.6
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31 A30 V11.4 mOhmsP - Channel 1 V- 55 C+ 150 C17 WSmd/SmtH SMT - 8Cut TapeSi1 Channel20 V42 nCEnhancement  
TN2124K1-G


Transistor: N-MOSFET; unipolar; 240V; 0.14A; 360mW; SOT23-3
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Microchip 2740
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AUD 0.7301
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134 mA240 V15 OhmsN - Channel 800 mV- 55 C+ 150 C360 mWSmd/SmtSOT - 23 (TO - 236AB)ReelSi1 Channel4.5 V Enhancement  
IRFR010PBF


Vishay Semiconductors MOSFET N-Chan 60V 7.7 Amp
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Vishay 2740
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AUD 0.8751
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8 A60 V200 mOhmsN - Channel  - 55 C+ 175 C27 WSmd/SmtDPAK - 3TubeSi 20 V Enhancement  
SP3022CNJ


30V 1 N-Channel + 1 P-Channel PDFNWB-8L(3.3x3.3) MOSFETs ROHS
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Siliup 2725
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AUD 0.0887
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SI9407BDY-E3


Transistor: P-MOSFET; unipolar; -60V; -4A; 5W; SO8
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Vishay 2613
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AUD 0.8024
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