MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI2342DS-T1-GE3


Vishay Semiconductors MOSFET 8V 6A 2.5
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Vishay 2910
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AUD 0.2754
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6 A8 V17 mOhmsN - Channel 350 mV- 55 C+ 150 C2.5 WSmd/SmtSOT - 23 - 3ReelSi1 Channel4.5 V10.5 nCEnhancement Trenchfet
IRLR8726T


30V 80A 54W 6mΩ@10V N Channel TO-252-2L MOSFETs ROHS
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HXY MOS 2745
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AUD 0.1519
Multiples of: 5

                   
NVJD4152PT1G


MOSFET 2 P Channel (Dual) 20V 880mA 1.2V @ 250uA 260 mΩ @ 880mA,4.5V SC-88 RoHS
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ON Semiconductor 2745
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AUD 0.192
Multiples of: 5

880 mA20 V215 mOhmsP - Channel 1.2 V- 55 C+ 150 C272 mWSMD/SMTSC - 88 - 6Reel , Cut TapeSi2 Channel- 12 V , + 12 V2.2 nCEnhancement  
IPD023N03LF2SATMA1


MOSFETs Addresses a broad range of applications from low- to high-switching frequency
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Infineon 2744
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AUD 1.0901
Multiples of: 1

137 A30 V2.35 mOhmsN - Channel 2.35 V- 55 C+ 175 C107 WSMD/SMTTO - 252 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V24 nCEnhancement StrongIRFET
RQ7P035ATTCR


MOSFETs Pch -100V -3.5A Power MOSFET
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ROHM 2740
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AUD 0.5779
Multiples of: 1

3.5 A100 V111 mOhmsP - Channel 2.5 V + 150 C1.5 WSMD/SMTT SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V40 nCEnhancement  
NTS2101PT1G


SOT-323 MOSFETs ROHS
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MSKSEMI 2735
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AUD 0.0592
Multiples of: 10

                   
TPBSS315P


SOT-23 MOSFETs ROHS
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TECH PUBLIC 2682
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AUD 0.0731
Multiples of: 5

                   
SQJ146EP-T1_JE3


MOSFETs N-CHANNEL 40-V (D-S) 175C MOSFET
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Vishay 2551
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AUD 0.5155
Multiples of: 1

75 A40 V7 mOhmsN - Channel 3.5 V- 55 C+ 175 C75 WSMD/SMTPOWERPAK SO - 8LReel , Cut TapeSi1 Channel- 10 V , + 10 V27 nCEnhancement  
2N7002BK.215


MOSFET N Trench 60V 350mA 2.1V @ 250uA 1.6 Ω @ 500mA,10V SOT-23 (SOT-23-3) RoHS
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Nexperia 2356
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AUD 0.0752
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SIRA80DP-T1-RE3


MOSFET 30V Vds 20-16V Vgs PowerPAK SO-8
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Vishay 2332
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AUD 2.2875
Multiples of: 1

100 A30 V470 uOhmsN - Channel 2.2 V- 55 C+ 150 C104 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 v , - 16 V125 nC  Trenchfet, Powerpak
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