MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IAUTN08S5N012LATMA1


MOSFETs MOSFET_(75V 120V(
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Infineon 2788
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AUD 3.9896
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410 A80 V1.15 mOhmsN - Channel 3.3 V- 55 C+ 175 C375 WSMD/SMTPG - HSOF - 8 - 2Reel , Cut TapeSi2 Channel- 20 V , + 20 V178 nCEnhancement  
BSC024NE2LS


MOSFET N-Channel 25V MOSFET
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Infineon 2787
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AUD 0.7612
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100 A25 V2.4 mOhmsN - Channel 1.2 V- 55 C+ 150 C48 WSmd/SmtTDSON - 8ReelSi1 Channel10 V23 nCEnhancement Optimos
BSC039N06NS


Transistor: N-MOSFET; unipolar; 60V; 100A; 69W; PG-TDSON-8
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Infineon 2787
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AUD 1.1719
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            Optimos      
CMLDM8005 TR


MOSFET SMD- Small Signal P-Channel Mosfet
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Central Semiconductor 2786
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AUD 0.4923
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650 mA20 V250 mOhmsP - Channel 1 V- 65 C+ 150 C350 mWSmd/SmtSOT - 563ReelSi2 Channel- 8 V1.2 nCEnhancement  
FCMT199N60


MOSFET 199mohm 600V SuperFET2
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ON Semiconductor 2786
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AUD 3.9403
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20.2 A600 V199 mOhmsN - Channel20 v , 30 V - 50 C+ 150 C208 WSmd/SmtPOWER - 88 - 4ReelSi 20 v , 30 V57 nC  Superfet Ii
RQ6E085BNTCR


MOSFET Nch 30V 8.5A Si MOSFET
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ROHM 2785
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AUD 0.5779
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8.5 A30 V11.1 mOhmsN - Channel 1 V- 55 C+ 150 C1.25 WSmd/SmtSOT - 457 - 6Cut TapeSi1 Channel20 V32.7 nCEnhancement  
RF4L055GNTCR


MOSFET NCH 60V 5.5A POWER
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ROHM 2785
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AUD 0.6304
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           Cut Tape       
TSM2302CX RFG


MOSFET 20V 3.9A Single N-Ch annel Power MOSFET
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Taiwan Semiconductor 2784
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AUD 0.2194
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2.8 A20 V40 mOhmsN - Channel 650 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel4.5 V5.4 nCEnhancement  
SQM120P06-07L_GE3


MOSFET 60 V 120A 375 W AEC-Q101 Qualified
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Vishay 2747
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AUD 2.8247
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- 120 A- 60 V6.7 mOhmsP - Channel - 2 V- 55 C+ 175 C375 WSmd/SmtTO - 263 - 3Reel  20 V180 nC  Trenchfet
BSC084P03NS3GATMA1


Transistor: P-MOSFET; unipolar; -30V; -78.6A; 69W; PG-TDSON-8
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Infineon 2677
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AUD 0.4172
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            Optimos P3      
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