MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXFP36N60X3


MOSFET 600V, 36A current capacity, Ultra junction X3, TO-220 package, MOSFET
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IXYS 2740
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AUD 6.2552
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36 A600 V90 mOhmsN - Channel 5 V- 55 C+ 150 C446 WThrough HoleTO - 220 - 3TubeSi1 Channel- 20 V , + 20 V29 nCEnhancement HiPerFET
FDMS7676


Fairchild Semiconductor MOSFET 3020V N-Chan PowerTrench
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ON Semiconductor 2739
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AUD 0.8324
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28 A30 V5.4 mOhmsN - Channel  - 55 C+ 150 C2.5 WSmd/SmtPOWER - 56 - 8ReelSi1 Channel20 V Enhancement Powertrench
PJQ5594-AU_R2_002A1


MOSFETs 150V N-Channel Enhancement Mode MOSFET
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Panjit 2739
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AUD 0.9966
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25 A150 V49 mOhmsN - Channel 4 V- 55 C+ 175 C79 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V22 nCEnhancementAEC - Q101 
TC2320TG-G


Trans MOSFET N/P-CH Si 200V 8-Pin SOIC N T/R
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Microchip 2738
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AUD 2.5933
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2 A200 V7 Ohms , 12 OhmsN And P - Channel  - 55 C+ 150 C Smd/SmtSOIC - 8ReelSi2 Channel20 V Enhancement  
IRFR9014TRLPBF


Vishay Semiconductors MOSFET P-Chan 60V 5.1 Amp
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Vishay 2737
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AUD 0.8406
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5.1 A- 60 V500 mOhmsP - Channel  - 55 C+ 150 C2.5 WSmd/SmtDPAK - 3ReelSi 20 V Enhancement  
FDN327N


SOT-23 MOSFETs ROHS
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SLKORMICRO 2735
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AUD 0.0151
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G1002-B


SOT-23 MOSFETs ROHS
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GOFORD 2735
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AUD 0.023
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PJMP210N65EC_T0_00601


MOSFETs 650V 390mohm 10A Easy to driver SJ MOSFET
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Panjit 2727
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AUD 1.4464
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19 mA650 V210 mOhmsN - Channel 4 V- 55 C+ 150 C150 WThrough HoleTO - 220 - 3TubeSi1 Channel- 30 V , 30 V34 nCEnhancement  
WD2302


20V 2A 350mW SOT-23-3 MOSFETs ROHS
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Weida Semiconductor 2696
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AUD 0.0105
Multiples of: 20

                   
RQ6E055BNTCR


MOSFET Nch 30V 5.5A Power MOSFET
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ROHM 2444
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AUD 0.3891
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5.5 A30 V19 mOhmsN - Channel 1 V- 55 C+ 150 C1.25 WSmd/SmtSOT - 457 - 6Cut TapeSi1 Channel20 V8.6 nCEnhancement  
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