MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AP9561GH


TO-252 MOSFETs ROHS
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APEC 2754
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AUD 0.3363
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TT8M2TR


ROHM Semiconductor MOSFET TRANS MOSFET NPCH 30V20V 2.5A 8PIN
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ROHM 2754
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AUD 0.6616
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2.5 A30 v , - 20 V90 mOhms , 68 mOhmsN - Channel, P - Channel 1.5 v , - 1 V- 55 C+ 150 C1.25 WSmd/SmtTSST - 8ReelSi2 Channel12 v , 10 V3.2 nC , 12 nC   
WSP9936


20V 8A 15mΩ@4.5V,8A 2W 750mV@250uA 2 N-Channel SOP-8 MOSFETs ROHS
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Winsok 2754
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AUD 0.1648
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AW2K21AR


MOSFETs WLCSP 2NCH 30V 20A
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ROHM 2753
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AUD 1.5876
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20 A30 V3 mOhmsN - Channel 2 V- 55 C+ 150 C1.6 WSMD/SMTWLCSP - 22Reel , Cut TapeSi2 Channel- 2 V , 10 V29 nCEnhancement  
TPH6R008QM,LQ


MOSFETs 80V UMOS9-H SOP-Advance(N) 6mohm
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Toshiba 2751
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AUD 0.614
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107 A60 V , 80 V6 mOhmsN - Channel 3.5 V + 175 C135 WSMD/SMTSOP - 8ReelSi1 Channel- 20 V , + 20 V38 nCEnhancement  
BUK9Y8R7-60E,115


MOSFET N-channel 60 V 8.7 mo FET
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Nexperia 2751
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AUD 0.7519
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86 A60 V6.8 mOhmsN - Channel15 V1.7 V- 55 C+ 175 C147 WSmd/SmtLFPAK - 4ReelSi1 Channel15 V31 nCEnhancement  
SISS4304DN-T1-UE3


MOSFETs N-CHANNEL 30-V (D-S) MOSFET
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Vishay 2750
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AUD 0.5516
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SSM6J412TU,LF


MOSFET Small Signal MOSFET P-ch VDSS=-20V VGSS=+-8V ID=-4.0A RDSON=0.0427O @ 4.5V in UF6 package
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Toshiba 2745
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AUD 0.3006
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           Cut Tape       
BUK9Y7R6-40E,115


Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 315A; 95W
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Nexperia 2729
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AUD 0.5319
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79 A40 V6.4 mOhmsN - Channel15 V1.7 V- 55 C+ 175 C95 WSmd/SmtLFPAK - 4Reel   16.4 nCEnhancement  
FDP060AN08A0


MOSFET 75V 80a .6Ohms/VGS=1V
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ON Semiconductor 2635
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AUD 2.1672
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   N Channel      TO - 220 - 3Tube       
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