MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WSF15N10G


MOSFET N Channel 100V 15A(Tj) 2.7V @ 250uA 75mO @ 5A,10V TO-252 RoHS
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Winsok 5193
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AUD 0.2295
Multiples of: 1

                   
FDS6676AS(UMW)


SOP-8 MOSFETs ROHS
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Youtai 2764
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AUD 0.1527
Multiples of: 5

                   
LN8340DT1AG


MOSFET N Trench 30V 17A 1V @ 250uA（Min） 9 mΩ @ 12.8A,10V DFN3030-8B RoHS
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Leshan 2764
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AUD 0.1292
Multiples of: 5

                   
TPM20V8PLS6


SOT-163 MOSFETs ROHS
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TECH PUBLIC 2764
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AUD 0.2472
Multiples of: 5

                   
SI3404HE3-TP


MOSFET N-Channel Enhancement Mode Field Effect Transistor
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Micro Commercial Components (MCC) 2764
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AUD 0.1662
Multiples of: 10

                   
SSM6J402TU,LF


MOSFET Small Signal MOSFET P-ch VDSS=-30V VGSS=+-20V ID=-2.0A RDSON=0.225Ohm @ 4V in UF6 package
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Toshiba 2764
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AUD 0.2517
Multiples of: 5

2 A30 V117 mOhmsP - Channel - 2.6 V- 55 C+ 150 C500 mWSmd/SmtUF - 6Cut TapeSi1 Channel20 V5.3 nCEnhancement U - Mosii
SISD5110DN-T1-UE3


MOSFETs PWRPK 100V 55A
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Vishay 2764
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AUD 1.1788
Multiples of: 1

                   
TPSQ3419EV-T1-GE3


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 2749
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AUD 0.1378
Multiples of: 5

                   
AON7430-MS


30V 30A 13mΩ@10V 2.5V N Channel DFN3x3-8L MOSFETs ROHS
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MSKSEMI 2716
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AUD 0.1038
Multiples of: 5

                   
HSU6006


MOSFET N Channel 60V 35A 2.5V @ 250uA 20mΩ @ 20A,10V TO-252 RoHS
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HUASHUO 1115
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AUD 0.1985
Multiples of: 5

                   
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