MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
RRL025P03TR


MOSFET Med Pwr, Sw MOSFET P Chan, -30V, -2.5A
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ROHM 3959
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AUD 0.4347
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2.5 A30 V55 mOhmsP - Channel 2.5 V- 55 C+ 150 C1 WSmd/SmtTUMT6ReelSi1 Channel20 V5.2 nCEnhancement  
TN0110N3-G


Transistor: N-MOSFET; unipolar; 100V; 2A; 1W; TO92
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Microchip 2815
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AUD 1.1558
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350 mA100 V3 OhmsN - Channel 600 mV- 55 C+ 150 C1 WThrough HoleTO - 92BulkSi1 Channel10 V Enhancement  
IAUCN08S7L110ATMA1


MOSFETs MOSFET_(75V 120V(
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Infineon 2814
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AUD 0.5796
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50 A80 V11 mOhmsN - Channel 2 V- 55 C+ 175 C58 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V14.8 nCEnhancement  
IRF7402TRPBF


MOSFET N Trench 20V 6.8A 700mV @ 250uA 35 mΩ @ 4.1A,4.5V SOIC-8_150mil RoHS
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Infineon 2813
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AUD 0.6942
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6.8 A20 V35 mOhmsN - Channel 700 mV- 55 C+ 150 C2.5 WSmd/SmtSOIC - 8ReelSi1 Channel12 V14 nC   
SIR668ADP-T1-RE3


MOSFET 100V Vds 20V Vgs PowerPAK SO-8
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Vishay 2813
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AUD 1.5591
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93.6 A100 V4 mOhmsN - Channel 4 V- 55 C+ 150 C104 WSmd/SmtPOWERPAK - SO - 8Cut TapeSi1 Channel20 V54 nC  Trenchfet, Powerpak
BSS138


SOT-23 MOSFETs ROHS
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High Diode 2813
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AUD 0.0135
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FS2301


20V 2.4A 120mΩ@4.5V,2.4A 1.2W 1.5V@250uA 105pF@10V P Channel 500pF@10V 8.6nC@4.5V -55℃~+150℃@(Tj) SOT-23 MOSFETs ROHS
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FUXINSEMI 2813
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AUD 0.0137
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BSS84


SOT-23 MOSFETs ROHS
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High Diode 2813
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AUD 0.0151
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SI3134KW-TP-ES


20V 880mA 350mW 220m@4.5V,0.5A 750mV@250uA 1PCSNChannel SOT-323 MOSFETs ROHS
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ElecSuper 2813
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AUD 0.0183
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NX7002BKR-ES


60V 300mA 1.5@10V,500mA 200mW 1.5V@250uA 1PCSNChannel SOT-23 MOSFETs ROHS
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ElecSuper 2153
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AUD 0.0111
Multiples of: 20

                   
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