MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NCE2301-ES


20V 3A 1W 57m@4.5V,3A 700mV@250uA 1PCSPChannel SOT-23 MOSFETs ROHS
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ElecSuper 5723
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AUD 0.0155
Multiples of: 20

                   
WSD6036DN


DFN-8L(3x3) MOSFETs ROHS
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Winsok 3385
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AUD 0.27
Multiples of: 1

                   
MCH6351-TL-W


ON Semiconductor MOSFET PCH 1.8V DRIVE SERIES
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ON Semiconductor 2832
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AUD 0.2988
Multiples of: 1

- 9 A- 12 V16.9 mOhmsP - Channel     Smd/SmtSOT - 363 - 6ReelSi1 Channel     
DMTH6016LPS-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 2832
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AUD 0.3185
Multiples of: 1

         Smd/SmtPowerdi5060 - 8Cut TapeSi      
IAUZN08S7L177ATMA1


MOSFETs OptiMOS 7 Power-Transistor
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Infineon 2832
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AUD 0.4564
Multiples of: 1

35 A80 V17.7 mOhmsN - Channel 2 V- 55 C+ 175 C45 WSMD/SMTPG - TDSON - 8Reel , Cut TapeSi1 Channel16 V11.8 nCEnhancement OptiMOS
SIZF918BDT-T1-GE3


MOSFETs DUAL N-CH 30-V (D-S) MOSFET W/SCHOTTKY
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Vishay 2832
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AUD 1.1197
Multiples of: 1

73 A , 158 A30 V1.4 mOhms , 3.3 mOhmsN - Channel 2.2 V- 55 C+ 150 C26.6 W , 60 WSMD/SMTPowerpair 6X5F Si2 Channel- 16 V , + 20 V , - 12 V , + 16 V19 nC , 51 nCEnhancement  
STU5N65M6


MOSFET N-channel 650 V, 1.15 Ohm typ 4 A MDmesh M6 Power MOSFET in an IPAK package
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STMicroelectronics 2831
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AUD 0.9637
Multiples of: 1

                   
AOD4126


TO-252 MOSFETs ROHS
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TECH PUBLIC 2829
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AUD 0.6474
Multiples of: 1

                   
PJA3474S-AU_R1_007A1


MOSFETs 100V N-Channel Enhancement Mode MOSFET
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Panjit 1889
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AUD 0.3645
Multiples of: 1

2.5 A100 V118 mOhmsN - Channel 3 V- 55 C+ 175 C1.5 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V4.4 nCEnhancementAEC - Q101 
IRF620PBF-BE3


N-Channel 200V 5.2A (Tc) 50W (Tc) Through Hole TO-220AB
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Vishay 970
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AUD 0.3868
Multiples of: 1000

5.2 A200 V800 mOhmsN - Channel 4 V- 55 C+ 150 C50 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V14 nCEnhancement  
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