MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
HSBA6214


60V 17A 35mΩ@10V,15A 2W 2.5V@250uA 46pF@10V 2 N-Channel 1.027nF@15V 19nC@10V -55℃~+150℃@(Tj) PRPAK5x6 MOSFETs ROHS
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HUASHUO 3011
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AUD 0.2537
Multiples of: 5

                   
CJMPD08


12V 3.6A 1V 1PCSPChannel DFNWB-6L-A(2x2) MOSFETs ROHS
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Changjing Electronics Technology 2827
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AUD 0.1404
Multiples of: 5

                   
TM4559AS


SOP-8 MOSFETs ROHS
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Tritech-MOS 2827
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AUD 0.1598
Multiples of: 5

                   
WSD2068


MOSFET 2 N Channel (Dual) 20V 7.5A 1V @ 250uA 15.5 mΩ @ 5.5A,4.5V DFN 2x3 RoHS
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Winsok 2827
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AUD 0.1618
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HSBA4018


PRPAK-8(5x6) MOSFETs ROHS
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HUASHUO 2827
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AUD 0.2073
Multiples of: 5

                   
RTR025P02TL


MOSFET P-CH 20V 2.5A TSMT3
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ROHM 2827
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AUD 0.2555
Multiples of: 5

2.5 A20 V115 mOhmsP - Channel  - 55 C+ 150 C1 WSmd/SmtT SMT - 3ReelSi1 Channel12 V Enhancement  
SQJ120EP-T1_GE3


MOSFETs N-CHANNEL 30-V (D-S) 175C MOSFET
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Vishay 2827
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AUD 0.7224
Multiples of: 1

202 A30 V1.8 mOhmsN - Channel 3 V- 55 C+ 175 C130 WSMD/SMTSO - 8L Si1 Channel- 20 V , + 20 V58 nC   
IRFU9214PBF


MOSFET P-Chan 250V 2.7 Amp
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Vishay 2827
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AUD 1.2558
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   P - Channel  - 55 C+ 150 C Through HoleIPAKTubeSi      
SQ2309CES-T1_BE3


MOSFETs P-CHANNEL 60-V (D-S) 175C MOSFET
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Vishay 2826
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AUD 0.1822
Multiples of: 1

                   
UT2305G-AE2-R


MOSFET P Trench 20V 4.2A 1.2V @ 250uA 65 mΩ @ 4.2A,4.5V SOT-23-3 RoHS
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Unisonic 727
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AUD 0.053
Multiples of: 10

                   
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