MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SSM6K513NU,LF


MOSFET Small Low ON Resistane MOSFETs
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Toshiba 2842
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AUD 0.3155
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15 A30 V6.5 mOhmsN - Channel 1.1 V + 150 C2.5 WSmd/SmtUDFN6B - 6Cut TapeSi1 Channel20 V7.5 nCEnhancement  
SIZF4414DT-T1-GE3


MOSFETs DUAL N-CHANNEL 40-V (D-S) MOSFET
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Vishay 2822
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AUD 0.9654
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PXN012-60QLJ


MOSFET PXN012-60QL - N-channel 60 V, 11.5 mOhm, logic level Trench MOSFET in MLPAK33
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Nexperia 2822
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AUD 1.3305
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42 A60 V11.5 mOhmsN - Channel 2.5 V- 55 C+ 150 C34.7 mWSMD/SMTMLPAK33 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V18.77 nCEnhancement  
D7N70


TO-252W MOSFETs ROHS
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Jingdao 2822
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AUD 0.2307
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IRFR4104TRPBF


Transistor: N-MOSFET; unipolar; 40V; 119A; 140W; DPAK
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Infineon 2821
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AUD 0.8127
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119 A40 V5.5 mOhmsN - Channel 4 V + 175 C140 WSmd/SmtDPAKReelSi1 Channel 89 nC   
ZVN3320FTA


N-Channel 200 V 60mA (Ta) 330mW (Ta) Surface Mount SOT-23-3
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Diodes Incorporated 2817
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AUD 0.1412
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60 mA200 V25 OhmsN - Channel 1 V- 55 C+ 150 C330 mWSmd/SmtSOT - 23 - 3Cut TapeSi1 Channel10 V Enhancement  
6616A


MOSFET 2 P Channel (Dual) 18V 16A 1V @ 250uA 21 mΩ @ 9A,4.5V;27 mΩ @ 6.2A,2.5V SOP-8_150mil RoHS
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GOFORD 2817
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AUD 0.2468
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RQ5G060BGTCL


MOSFETs SOT346 N-CH 40V 6A
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ROHM 2817
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AUD 0.3267
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6 A40 V20.6 mOhmsN - Channel 2.5 V- 55 C+ 150 C1 WSMD/SMTT SMT - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V10.6 nCEnhancement  
SIR5211DP-T1-GE3


MOSFETs P-CHANNEL 20-V (D-S) MOSFET
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Vishay 2817
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AUD 0.5746
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105 A20 V3.2 mOhmsP - Channel 1.5 V- 55 C+ 150 C56.8 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 12 V , + 12 V105 nCEnhancement  
SISD4604LDN-T1-UE3


MOSFETs PPAK1212 N-CH 60V 52A
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Vishay 2817
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AUD 0.8948
Multiples of: 1

                   
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