MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI3415CHE3-TP


MOSFETs
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Micro Commercial Components (MCC) 2803
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AUD 0.1215
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3.9 A20 V40 mOhmsP - Channel 1.25 V- 55 C+ 150 C1 WSMD/SMTSOT - 23 - 3Reel , Cut TapeSi1 Channel- 10 V , + 10 V13 nCEnhancement  
CMS3415-HF


SOT-23 MOSFETs ROHS
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Comchip 2803
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AUD 0.1342
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FKBA4903


DFN-8(5.2x5.5) MOSFETs ROHS
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SINO-IC 2803
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AUD 0.1564
Multiples of: 5

                   
SM2661PSCC


SOT-23-6 MOSFETs ROHS
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TECH PUBLIC 2803
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AUD 0.162
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WM02DN70A


Transistor: N-MOSFET x2; unipolar; TSSOP8; common drain; ESD
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Wayon 2803
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AUD 0.2299
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BSC196N10NS G


MOSFET OptiMOS 2 PWR TRANST 100V 45A
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Infineon 2803
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AUD 0.816
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8.5 A100 V19.6 mOhmsN - Channel  - 55 C+ 150 C78 WSmd/SmtTDSON - 8ReelSi1 Channel20 V Enhancement Optimos
RQ3P120BKFRATCB


MOSFETs Nch 100V 12A, HSMT8AG, Power MOSFET for Automotive
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ROHM 2803
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AUD 0.8964
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12 A100 V58 mOhmsN - Channel 2.5 V- 55 C+ 150 C40 WSMD/SMTH SMT - 8AGReel , Cut TapeSi1 Channel20 V6.9 nCEnhancement  
PJD30N04S-AU_L2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 2803
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AUD 0.9013
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43 A40 V10.6 mOhmsN - Channel 2.3 V- 55 C+ 175 C36 WSMD/SMTTO - 252AA - 2Reel , Cut TapeSi1 Channel- 20 V , + 20 V13 nCEnhancementAEC - Q101 
PTS2017


MOSFET N Channel 20V 17A(Tc) 1.2V @ 250uA 7.5mO @ 12A,4.5V SOP-8 RoHS
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PUOLOP 2609
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AUD 0.1928
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XPJ1R004PB,LXHQ


MOSFETs 40V UMOS9 1mohm S-TOGL
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Toshiba 2366
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AUD 1.5367
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