MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WPM3401-3/TR-VB


30V P Channel SOT-23 MOSFETs ROHS
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VBsemi Elec 2808
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AUD 0.103
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HSL3P20


200V 3A 1.5W 2400m@10V,0.5A 4V@250uA 1PCSPChannel SOT-223 MOSFETs ROHS
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HUASHUO 2808
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AUD 0.2918
Multiples of: 5

                   
TN2124K1-G


Transistor: N-MOSFET; unipolar; 240V; 0.14A; 360mW; SOT23-3
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Microchip 2808
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AUD 0.8545
Multiples of: 1

134 mA240 V15 OhmsN - Channel 800 mV- 55 C+ 150 C360 mWSmd/SmtSOT - 23 (TO - 236AB)ReelSi1 Channel4.5 V Enhancement  
SQM40041EL_GE3


MOSFET Pch -40V Vds 20V Vgs TO-263
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Vishay 2808
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AUD 3.3582
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120 A40 V3.4 mOhmsP - Channel - 2.5 V- 55 C+ 175 C157 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V450 nCEnhancement Trenchfet
PMV15ENEAR


30V 6.2A 20mO@5.8A,10V null SOT-23 MOSFETs ROHS
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Nexperia 2807
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AUD 1.0308
Multiples of: 1

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DMP34M4SPS-13


MOSFET MOSFET BVDSS: 25V-30V
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Diodes Incorporated 2805
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AUD 0.7996
Multiples of: 1

135 A30 V2.9 mOhmsP - Channel 2.6 V- 55 C+ 150 C3 WSmd/SmtPowerdi5060 - 8 Si1 Channel25 V127 nCEnhancement  
NTHD4P02FT1G


MOSFET -20V -3A P-Channel w/3A Schottky
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ON Semiconductor 2805
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AUD 1.0245
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3 A20 V200 mOhmsP - Channel  - 55 C+ 150 C1.1 WSmd/SmtCHIP - FET - 8ReelSi1 Channel12 V Enhancement  
BSP89H6327XTSA1


Transistor: N-MOSFET; unipolar; 240V; 0.35A; 1.8W; SOT223
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Infineon 2804
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AUD 0.2824
Multiples of: 1

            Sipmos      
MCH6321-TL-E


MOSFET SWITCHING DEVICE
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ON Semiconductor 2804
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AUD 0.2873
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4 A20 V63 mOhmsP - Channel  - 55 C+ 150 C1.5 WSmd/SmtMCPH6ReelSi1 Channel10 V    
BSC112N06LDATMA1


MOSFET TRENCH 40<-<100V
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Infineon 2786
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AUD 1.0048
Multiples of: 1

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