MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRLR2705TRLPBF


MOSFET MOSFT 55V 24A 40mOhm 16.7nC LogLvl
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Infineon 2798
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AUD 0.5188
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28 A55 V65 mOhmsN - Channel    46 WSmd/SmtDPAKReelSi1 Channel16 V16.7 nC   
MIC94050YM4-TR


Trans MOSFET P-CH Si 6V 1.8A 4-Pin(3+Tab) SOT-143 T/R
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Microchip 2798
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AUD 0.8269
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- 1.8 A- 6 V160 mOhmsP - Channel1.8 V1.2 V- 40 C+ 150 C568 mWSmd/SmtSOT - 143 - 4ReelSi 1.8 V Enhancement  
RQ3N060ATTB1


MOSFETs HSMT8 P-CH 80V 6A
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ROHM 2797
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AUD 1.0081
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18 A80 V52 mOhmsP - Channel 4 V- 55 C+ 150 C2 WSMD/SMTH SMT - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V50 nCEnhancement  
PSMN4R3-80PS,127


MOSFET N-Ch 80V 4.3 mOhms
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Nexperia 2797
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AUD 6.3899
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120 A80 V4.3 mOhmsn - channel 3 V- 55 C+ 175 C306 Wthrough holeTO - 220 - 3Tubesi1 channel20 V104 nC   
SH8MA4TB1


MOSFET 30V NCH+PCH POWER
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ROHM 2795
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AUD 0.7766
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9 A , 8.5 A30 V21 mOhms , 29.6 mOhmsN - Channel, P - Channel 1 V- 55 C+ 150 C3 WSmd/SmtSOP - 8Cut TapeSi2 Channel20 V15.5 nC , 19.6 nCEnhancement  
IPA70R360P7SXKSA1


700V 12.5A 360mO@10V,3A 26.4W null TO-220 MOSFETs ROHS
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Infineon 2794
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AUD 0.7766
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12.5 A700 V300 mOhmsN - Channel 2.5 V- 40 C+ 150 C26.5 WThrough HoleTO - 220FP - 3TubeSi1 Channel16 V16.4 nCEnhancement Coolmos
PJD60P04E-AU_L2_006A1


MOSFETs 40V P-Channel Enhancement Mode MOSFET
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Panjit 2794
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AUD 0.967
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61 A40 V17.2 mOhmsP - Channel 2.5 V- 55 C+ 175 C75 WSMD/SMTTO - 252AA - 3Reel , Cut TapeSi1 Channel- 25 V , + 25 V56 nCEnhancementAEC - Q101 
NM2302B


SOT-23 MOSFETs ROHS
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Jingdao 2793
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AUD 0.0304
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PJQ5948V-AU_R2_002A1


MOSFETs 40V Dual N-Channel Enhancement Mode MOSFET
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Panjit 2787
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AUD 0.7109
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35 A40 V13.4 mOhmsN - Channel 3.5 V- 55 C+ 175 C32 WSMD/SMTDFN - 5060B - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V9.5 nCEnhancementAEC - Q101 
YFW2301B


20V 2.3A 135mΩ@4.5V,2A 700mW 500mV@250uA P Channel SOT-23 MOSFETs ROHS
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YFW Electronics 0
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AUD 0.0285
Multiples of: 20

                   
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