MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQPF7N65C


MOSFET 650V N-Channel Adv Q-FET C-Series
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ON Semiconductor 2910
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AUD 1.5532
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   N - Channel  - 55 C+ 150 C Through HoleTO - 220FTube       
STU6N62K3


STMicroelectronics MOSFET N-Ch, 620V-1.1ohms 5.5A
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STMicroelectronics 2910
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AUD 1.5827
Multiples of: 3000

5.5 A620 V1.28 OhmsN - Channel30 V - 55 C+ 150 C90 WThrough HoleIPAK - 3TubeSi1 Channel30 V34 nCEnhancement Supermesh
SIR880ADP-T1-GE3


N-Channel 80 V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8
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Vishay 2910
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AUD 1.5972
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60 A80 V5.2 mOhmsN - Channel 1.5 V- 55 C+ 150 C83 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel20 V72 nCEnhancement Trenchfet, Powerpak
SQJ488EP-T1_GE3


MOSFET 100V 32A 27watt AEC-Q101 Qualified
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Vishay 2910
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AUD 1.6015
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32 A100 V21 mOhmsN - Channel 2 V- 55 C+ 175 C83 WSmd/SmtSO - 8L - 4ReelSi1 Channel20 V18 nCEnhancementAec - Q101Trenchfet
NTMJST1D4N06CLTXG


MOSFETs TRENCH 6 60V LFPAK 5X7
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ON Semiconductor 2910
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AUD 1.6518
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273 A40 V1.49 mOhmsN - Channel 3.5 V- 55 C+ 175 C116 WSMD/SMTTCPAK57 - 10Reel , Cut TapeSi1 Channel- 20 V , + 20 V92.2 nCEnhancement  
PJQ5540V-AU_R2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 1.68
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174 A40 V2.1 mOhmsN - Channel 3.5 V- 55 C+ 175 C3.3 WSMD/SMTDFN - 5060X - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V63 nCEnhancementAEC - Q101 
STL12N60M6


N-Channel Power MOSFET 650V 6.4A 8-Pin PowerFLAT T/R
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STMicroelectronics 2910
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AUD 1.6826
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6.4 A600 V490 mOhmsN - Channel 3.25 V- 55 C+ 150 C48 WSmd/SmtPowerflat5x6 - 4  1 Channel25 V12.3 nCEnhancement  
SI7336ADP-T1-GE3


MOSFET 30V 30A 5.4W 3.0mohm @ 10V
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Vishay 2910
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AUD 1.7049
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8ReelSi     Trenchfet
IRL630PBF-BE3


N-Channel 200V 9A (Tc) 74W (Tc) Through Hole TO-220AB
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Vishay 2910
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AUD 1.7218
Multiples of: 1000

          TO - 220 - 3TubeMosfet (Metal Oxide)      
STL11N65M5


STMicroelectronics MOSFET
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STMicroelectronics 2716
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AUD 1.8056
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8.5 A650 V530 mOhmsN - Channel25 V4 V- 55 C+ 150 C70 WSmd/SmtPowerflat - 12Cut TapeSi1 Channel25 V17 nCEnhancement Mdmesh
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