MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFZ20PBF-BE3


N-Channel 50V 15A (Tc) 40W (Tc) Through Hole TO-220AB
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Vishay 2910
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AUD 1.3929
Multiples of: 1000

15 A50 V100 mOhmsN - Channel 4 V- 55 C+ 150 C40 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V12 nCEnhancement  
PSMN5R5-60YS,115


MOSFET N-CHANNEL 60V STD LEVEL MOSFET
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Nexperia 2910
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AUD 1.3946
Multiples of: 1500

   N - Channel  - 55 C+ 175 C Smd/SmtSOT - 669Reel       
NVMFS5C645NT1G


MOSFETs 60V 1.65MOHM T6 SINGLE S08FL
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ON Semiconductor 2910
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AUD 1.4048
Multiples of: 1

92 A60 V4.6 mOhmsN - Channel 4 V- 55 C+ 175 C79 WSMD/SMTDFN - 5Reel , Cut TapeSi1 Channel- 20 V , + 20 V20.4 nCEnhancement  
SI7850DP-T1-GE3


MOSFET 60V 10.3A 4.5W 22mohm @ 10V
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Vishay 2910
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AUD 1.4087
Multiples of: 3000

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8Reel       
SIRA02DP-T1-GE3


MOSFET 30V 2mOhm@10V 50A N-Ch G-IV
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Vishay 2910
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AUD 1.4357
Multiples of: 3000

50 A30 V1.65 mOhmsN - Channel 1.1 V- 55 C+ 150 C71.4 WSmd/SmtPOWERPAK SO - 8ReelSi1 Channel20 v , - 16 V117 nCEnhancement Trenchfet, Powerpak
FDPF5N60NZ


MOSFET 600V, N-Channel MOSFET, UniFET-II
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ON Semiconductor 2910
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AUD 1.4375
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4.5 A600 V1.65 Ohmsn - channel 5 V + 150 C33 Wthrough holeTO - 220FTubesi1 channel25 V10 nC  unifet
NTMYS013N08LHTWG


MOSFETs T8 80V LL LFPAK
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ON Semiconductor 2910
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AUD 1.4525
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42 A80 V17 mOhmsN - Channel 2 V- 55 C+ 175 C53 WSMD/SMTLFPAK - 4Reel , Cut TapeSi1 Channel- 20 V , + 20 V17 nCEnhancement  
PJD55P03E-AU_L2_006A1


MOSFETs 30V P-Channel Enhancement Mode MOSFET
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Panjit 2910
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AUD 1.4719
Multiples of: 1

48 A30 V12.1 mOhmsP - Channel 2.5 V- 55 C+ 175 C3 WSMD/SMTTO - 252AA - 3Reel , Cut TapeSi1 Channel- 25 V , + 25 V34 nCEnhancementAEC - Q101 
FQPF8N60C


Fairchild Semiconductor MOSFET 600V N-Ch Q-FET advance C-Series
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ON Semiconductor 2910
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AUD 1.5171
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7.5 A600 V1.2 Ohmsn - channel  - 55 C+ 150 C48 Wthrough holeTO - 220 - 3Tubesi1 channel30 V enhancement  
IRLU3110ZPBF


International Rectifier MOSFET MOSFT 100V 63A 14mOhm 34nC Log Lvl
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Infineon 2910
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AUD 1.4446
Multiples of: 3000

63 A100 V16 mOhmsN - Channel16 V   140 WThrough HoleIPAK - 3TubeSi1 Channel16 V34 nC   
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