MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPB60R040C7


MOSFETs HIGH POWER_NEW
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Infineon 1545
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AUD 11.6171
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2N6790


Trans MOSFET N-CH 200V 3.5A 3-Pin TO-39
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Infineon 0
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AUD 11.5753
Multiples of: 50

                   
IXTT26N60P


MOSFET 26.0 Amps 600 V 0.27 Ohm Rds
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IXYS 0
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AUD 11.5814
Multiples of: 300

26 A600 V270 mOhmsN - Channel  - 55 C+ 150 C460 WSmd/SmtTO - 268 - 3TubeSi1 Channel30 V Enhancement  
UJ3C065080K3S


MOSFET 650V/80mOhm, SiC, CASCODE, G3, TO-247-3L, REDUCED Rth
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UnitedSiC 0
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AUD 11.5932
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31 A650 V100 mOhmsN - Channel 4 V- 55 C+ 175 C190 WThrough HoleTO - 247 - 3TubeSic1 Channel25 V51 nCEnhancementAec - Q101 
IPZA60R045P7XKSA1


MOSFET HIGH POWER_NEW
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Infineon 0
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AUD 11.597
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           TubeSi      
AUIRFP2907


International Rectifier MOSFET AUTO 75V 1 N-CH HEXFET 4.5mOhms
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Infineon 0
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AUD 11.6604
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209 A75 V4.5 mOhmsN - Channel20 V - 55 C 470 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V410 nCEnhancementAec - Q101 
SLA5074


Mosfet Array 4 N-Channel (Half Bridge) 60V 5A 4.8W Through Hole 15-ZIP
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Sanken 0
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AUD 11.6946
Multiples of: 1080

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IV2Q12160D7Z


TO-263-7 MOSFETs ROHS
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AUD 11.6998
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IV2Q12160T4Z


TO-247-4 MOSFETs ROHS
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AUD 11.6998
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IRFP460


IRFP460
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IXYS 0
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AUD 11.7146
Multiples of: 1

                   
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