MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IMZ120R060M1H


MOSFET SIC DISCRETE
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Infineon 413
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AUD 12.9266
Multiples of: 1

                   
FCH040N65S3-F155


MOSFET SuperFET3 650V 40 mOhm
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ON Semiconductor 32
Ships to you
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AUD 14.6303
Multiples of: 1

65 A650 V35.4 mOhmsN - Channel 2.5 V- 55 C+ 150 C417 WThrough HoleTO - 247 - 3 Si1 Channel30 V136 nCEnhancement Superfet Iii
IXFH94N30T


MOSFET Trench HiperFETs Power MOSFET
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IXYS 0
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AUD 11.7201
Multiples of: 1

94 A300 V36 mOhmsn - channel     through holeTO - 247 - 3Tubesi     hiperfet
IXFT150N17T2


MOSFET MSFT N-CH TRENCH GATE -GEN2
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IXYS 0
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AUD 11.7543
Multiples of: 300

150 A175 V9.7 mOhmsn - channel 2.5 V- 55 C+ 175 C880 Wsmd/smtTO - 268 - 3Tubesi1 channel20 V233 nCenhancement hiperfet
IXFT16N80P


MOSFET 16 Amps 800V 0.6 Rds
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IXYS 0
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AUD 11.77
Multiples of: 300

16 A800 V600 mOhmsn - channel  - 55 C+ 150 C460 Wsmd/smtTO - 268 - 3Tubesi1 channel30 V enhancement hiperfet
TK49N65W,S1F(S


MOSFET Power MOSFET 49.2A 400W 650V
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Toshiba 0
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AUD 11.7851
Multiples of: 1

49.2 A650 V55 mOhmsN - Channel 2.5 V + 150 C400 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V160 nCEnhancement  
SPW55N80C3XK


Trans MOSFET N-CH 850V 54.9A 3-Pin(3+Tab) TO-247 Tube
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Infineon 0
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AUD 11.7968
Multiples of: 1

                   
SIHK045N60E-T1-GE3


MOSFET N-CHANNEL 600V
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Vishay 0
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AUD 11.8125
Multiples of: 1

48 A600 V49 mOhmsN - Channel 5 V- 55 C+ 150 C278 WSMD/SMTPOWERPAK - 9Reel , Cut TapeSi1 Channel- 30 V , + 30 V65 nCEnhancement  
IXTA130N15X4-7


MOSFET DISCMSFT NCHULTRJNCTN X3CLASS
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IXYS 0
6 to 16 Weeks Calender.png

AUD 11.8206
Multiples of: 1

130 A150 V8 mOhmsN - Channel 2.5 V- 55 C+ 150 C400 WSmd/SmtTO - 263 - 7 Si1 Channel20 V87 nCEnhancement Hiperfet
2N6798


Trans MOSFET N-CH 200V 5.5A 3-Pin TO-39
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Infineon 0
6 to 16 Weeks Calender.png

AUD 11.8281
Multiples of: 10

5.5 A  N    25 WThrough Hole Bulk    Enhancement  
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