MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPZA60R060P7


MOSFETs HIGH POWER_NEW
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
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AUD 12.1166
Multiples of: 1

                   
SUP75P05-08-E3


MOSFET 55V 75A 250W
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Vishay 0
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AUD 12.132
Multiples of: 1

75 A- 55 V8 mOhmsp - channel20 V - 55 C+ 175 C250 Wthrough holeTO - 220 - 3Tube    enhancement  
IXFA72N30X3


MOSFET DiscMSFT NChUltrJnctn X3Class TO-263D2
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IXYS 0
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AUD 12.1333
Multiples of: 1

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IXFK140N25T


MOSFET TRENCH HIPERFET PWR MOSFET 250V 140A
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IXYS 0
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AUD 12.143
Multiples of: 25

140 A250 V17 mOhmsn - channel 5 V- 55 C+ 150 C960 Wthrough holeTO - 264 - 3Tubesi1 channel20 V255 nCenhancement hiperfet
GS61008P-E05-MR


MOSFET No longer available. Order GS61008P-MR
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Gan Systems 0
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AUD 12.1543
Multiples of: 1

90 A100 V7.4 mOhmsn - channel 1.6 V- 55 C+ 150 C smd/smtGANPX - 4Reelgan1 channel7 V12 nCenhancement  
IXFH20N60Q


MOSFET 20 Amps 600V 0.35 Rds
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IXYS 0
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AUD 12.1958
Multiples of: 1

20 A600 V350 mOhmsn - channel30 V - 55 C+ 150 C300 Wthrough holeTO - 247 - 3Tube    enhancement  
IXFX74N50P2


MOSFET PolarP2 Power MOSFET
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IXYS 0
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AUD 12.2034
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74 A500 V77 mOhmsn - channel  - 55 C+ 150 C1.4 kWthrough holeTO - 247 - 3Tubesi1 channel30 V   polar2 hiperfet
IXFQ22N60P3


MOSFET 600V 22A 0.36Ohm PolarP3 Power MOSFET
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IXYS 0
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AUD 12.2123
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22 A600 V360 mOhmsn - channel 5 V  500 Wthrough holeTO - 3P - 3Tubesi1 channel30 V38 nC  hiperfet
NTE2375


Transistor: N-MOSFET; 100V; 41A; TO247
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NTE 0
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AUD 12.2229
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STFW45N65M5


STMicroelectronics MOSFET
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STMicroelectronics 0
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AUD 12.263
Multiples of: 1

35 A650 V67 mOhmsn - channel 3 V + 150 C57 Wthrough holeTO - 3PFReelsi1 channel25 V82 nCenhancement mdmesh
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