MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFP450LCPBF


MOSFET N Trench 500V 14A 4V @ 250uA 8.4A,10V TO-247 (AC) RoHS
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AUD 11.3678
Multiples of: 1

                   
IXFH60N60X3


MOSFET DISCRETE MOSFET 60A 600V X3 TO
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IXYS 0
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AUD 11.3492
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60 A600 V51 mOhmsN - Channel 5 V- 55 C+ 150 C625 WThrough HoleTO - 247 - 3TubeSi1 Channel- 20 V , + 20 V51 nCEnhancement HiPerFET
IXFT60N60X3HV


MOSFET DISCRETE MOSFET 60A 600V X3 TO
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IXYS 0
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AUD 11.3492
Multiples of: 1

60 A600 V51 mOhmsN - Channel 5 V- 55 C+ 150 C625 WSMD/SMTTO - 268HV - 2TubeSi1 Channel- 20 V , + 20 V51 nCEnhancement HiPerFET
TK49N65W5,S1F


MOSFET TO247OS PD=400W 1MHz PWR MOSFET TRNS
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Toshiba 0
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AUD 11.3601
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49.2 A650 V57 mOhmsN - Channel 4.5 V- 55 C+ 150 C400 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V185 nCEnhancement Dtmosiv
GAN140-650FBEZ


GaN FETs MOS DISCRETES
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Nexperia 0
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AUD 11.3785
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IXTH240N15X4


MOSFET 150V/240A Ultra Junction X4-Class Power MOSFET, TO-247
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IXYS 0
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AUD 11.3874
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240 A150 V4.4 mOhmsN - Channel 4.5 V- 55 C+ 175 C940 WThrough Hole   1 Channel20 V195 nCEnhancement Hiperfet
IPDQ60R022S7AXTMA1


MOSFETs Y
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AUD 11.3929
Multiples of: 750

24 A600 V22 mOhmsN - Channel 4.5 V- 40 C+ 150 C416 WSMD/SMTHDSOP - 22Reel , Cut TapeSi1 Channel- 20 V , + 20 V150 nCEnhancement CoolMOS
IRFF9024


MOSFET
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AUD 11.409
Multiples of: 2

6.4 A- 60 V290 mOhmsp - channel  - 55 C+ 150 C20 Wthrough holeTO - 39 - 3   20 V enhancement  
2N6802


Trans MOSFET N-CH 500V 11A 3-Pin TO-39
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AUD 11.4145
Multiples of: 1

   N Channel      TO - 205AF        
2N6794


MOSFET
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AUD 11.4145
Multiples of: 25

1.5 A500 V3.1 Ohmsn - channel  - 55 C 20 Wthrough holeTO - 205AF - 3 si1 channel20 V enhancement  
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