MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXFT6N100F


MOSFET IXFT6N100F 1000V 6A HIPERFET F-Class HiPerRF Capable MOSFETs
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
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AUD 11.1781
Multiples of: 1

6 A1 kV1.9 OhmsN - Channel  - 55 C+ 150 C180 WSmd/SmtTO - 268 - 3TubeSi1 Channel20 V Enhancement  
STP30NM50N


MOSFET N-Ch 500 Volt Amp Power MDmesh
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 11.18
Multiples of: 1

27 A500 V90 mOhmsn - channel25 V - 55 C+ 150 C190 Wthrough holeTO - 220 - 3Reel    enhancement  
HC3M0032120D


TO-247-3L SiC MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

HXY MOS 0
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AUD 11.2262
Multiples of: 1

                   
IXGH30N60U1


MOSFET 30 Amps 600V
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IXYS 0
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AUD 11.2357
Multiples of: 1

30 A600 V       through holeTO - 247 - 3Tube       
IMZA65R048M1H


MOSFET
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Infineon 0
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AUD 11.2429
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IXFA130N15X3


MOSFET DiscMSFT NChUltrJnctn X3Class TO-263D2
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IXYS 0
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AUD 11.246
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           Tube       
SIHG80N60EF-GE3


MOSFET 650V Vds; 30V Vgs TO-247AC
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Vishay 0
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AUD 11.2506
Multiples of: 1

80 A600 V32 mOhmsN - Channel 2 V- 55 C+ 150 C520 WThrough HoleTO - 247AC - 3TubeSi1 Channel30 V400 nCEnhancement  
NTE461


Transistor: N-JFET x2; 50V; TO71
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NTE 0
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AUD 11.2687
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NTE2954


Trans MOSFET N-CH 100V 90A 3-Pin(3+Tab) TO-220
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AUD 11.28
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2SJ553-L(E)


Trans MOSFET P-CH 60V 30A 3-Pin(3+Tab) LDPAK(L) Box
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AUD 11.3131
Multiples of: 1

30 A  p    75 Wthrough hole Box    enhancement  
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