MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPB100N12S3-05


MOSFET MOSFET_(120V 300V)
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Infineon 9
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AUD 7.1277
Multiples of: 1

                   
TK31N60W,S1VF


Toshiba MOSFET DTMOSIV 600V 88mOhm 30.8A 230W 3000pF
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Toshiba 0
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AUD 7.1196
Multiples of: 30

30.8 A600 V73 mOhmsn - channel 2.7 v to 3.7 V- 55 C+ 150 C230 Wthrough holeTO - 247 - 3Reelsi1 channel30 V86 nC  dtmosiv
ALD310702SCL


MOSFET Quad P-Channel EPAD Matched Pair
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Advanced Linear Devices 0
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AUD 7.123
Multiples of: 1

2.03 mA8 V1.14 kOhmsP - Channel 220 mV0 C+ 70 C500 mWSmd/SmtSOIC - 16 Si4 Channel- 8 V-Enhancement  
SIHM080N60E-T1-GE3


MOSFETs E Series Power MOSFET PowerPAK 8x8L
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Vishay 0
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AUD 7.1262
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51 A600 V84 mOhmsN - Channel 5 V- 55 C+ 150 C500 WSMD/SMTPOWERPAK - 8X8LReel , Cut TapeSi1 Channel- 30 V , + 30 V42 nCEnhancement  
TK12A60U(Q,M)


N-Channel 600 V 12A (Ta) 35W (Tc) Through Hole TO-220SIS
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Toshiba 0
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AUD 7.128
Multiples of: 1

12 A600 V400 mOhmsn - channel  - 55 C+ 150 C35 Wthrough holeTO - 220 - 3Traysi1 channel30 V enhancement  
IPW60R099C6XK


Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-247
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Infineon 0
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AUD 7.1352
Multiples of: 240

                   
SCT2450KEC


MOSFET FET 1200V 5A 450mOhm Silicon Carbide SiC
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ROHM 0
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AUD 7.1368
Multiples of: 1

10 A1200 V450 mOhmsN - Channel 1.6 V- 55 C+ 175 C85 WThrough HoleTO - 247 - 3TubeSic1 Channel- 6 v , 22 V27 nCEnhancement  
IPP60R099C6XK


Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-220
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Infineon 0
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AUD 7.1388
Multiples of: 1

                   
IRF7341


Trans MOSFET N-CH 55V 4.7A 8-Pin SOIC
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Infineon 0
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AUD 7.1407
Multiples of: 1

                   
FCH043N60


MOSFET SuperFET2 600V Fast ver
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ON Semiconductor 0
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AUD 7.15
Multiples of: 30

75 A600 V43 mOhmsn - channel20 V3.5 V- 55 C+ 150 C592 Wthrough holeTO - 247 - 3 si1 channel20 V163 nCenhancement superfet ii
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