MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TK39N60W5,S1VF(S


MOSFET N Trench 600V 38.8A 4.5V @ 1.9mA 74 mΩ @ 19.4A，10V TO-247 RoHS
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Toshiba 194
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AUD 6.955
Multiples of: 1

                   
STWA20N95DK5


MOSFET PTD HIGH VOLTAGE
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 0
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AUD 6.937
Multiples of: 1

                   
IXTA140N12T2


MOSFET DiscMSFT NChTrenchGate-Gen2 TO-263D2
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IXYS 0
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AUD 6.9373
Multiples of: 1

           Tube      Trencht2
WMJ53N65C2


Transistor: N-MOSFET; SJ-MOSFET C2; unipolar; 650V; 53A; 378W
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Wayon 0
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AUD 6.9373
Multiples of: 1

            Sj - Mosfet C2      
FCB36N60NTM


MOSFET 600V NChannel MOSFET SupreMOST
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ON Semiconductor 0
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AUD 6.9423
Multiples of: 1

36 A600 V90 mOhmsn - channel 4 V- 55 C+ 150 C312 Wsmd/smtD2PAKReelsi1 channel30 V112 nC   
NTBLS1D1N08H


MOSFET T8-80V IN TOLL
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ON Semiconductor 0
6 to 16 Weeks Calender.png

AUD 6.9429
Multiples of: 1

           Cut Tape       
BUK761R8-30C,118


Trans MOSFET N-CH 30V 312A Automotive 3-Pin(2+Tab) D2PAK T/R
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NXP 0
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AUD 6.9477
Multiples of: 1

   n    333 Wsurface mount Tape And Reel    enhancement  
APT28F60B


MOSFET Power FREDFET - MOS8
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Microchip 0
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AUD 6.9509
Multiples of: 1

30 A600 V170 mOhmsn - channel  - 55 C+ 150 C520 Wthrough holeTO - 247 - 3 si1 channel30 V140 nCenhancement  
IPI60R125CP


MOSFET COOL MOS N-CH 650V 0.125Ohms
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Infineon 0
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AUD 6.9524
Multiples of: 500

25 A600 V125 mOhmsn - channel  - 55 C+ 150 C208 Wthrough holeTO - 262Tubesi1 channel20 V enhancement coolmos
FDP8442


40V, 80A, 2.8 OHM NCH , POWER TRENCH MOSFET
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ON Semiconductor 0
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AUD 6.9527
Multiples of: 101

                   
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