MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2SJ462-T1-AZ


Trans MOSFET P-CH 12V 2.5A 3-Pin(2+Tab) SC-84 T/R
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Renesas 0
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AUD 7.1512

Multiples of: 100

2.5 A  p    2 Wsurface mount Tape And Reel    enhancement  
APT9M100B


MOSFET FG, MOSFET, 1000V, TO-247
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Microchip 0
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AUD 7.1526

Multiples of: 3

9 A1000 V1.4 OhmsN - Channel 4 V- 55 C+ 150 C335 WThrough HoleTO - 247 - 3 Si +/- 30 V80 nCEnhancement  
SIHB33N60EF-GE3


MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
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Vishay 0
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AUD 7.1538

Multiples of: 1

33 A600 V98 mOhmsN - Channel 2 V- 55 C+ 150 C278 WSmd/SmtTO - 263 - 3ReelSi1 Channel20 V155 nC  Ef Series
IPB017N10N5LF


Transistor: N-MOSFET; unipolar; 100V; 180A; 313W; PG-TO263-7
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Infineon 0
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AUD 7.1607

Multiples of: 1

            Optimos 5      
IRFS3107-7PBF


Transistor: N-MOSFET; unipolar; 75V; 260A; 370W; D2PAK-7
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Infineon 0
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AUD 7.1775

Multiples of: 1

            hexfet®      
R6020JNZ4C13


MOSFET NCH 600V 20A POWER
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ROHM 0
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AUD 7.1814

Multiples of: 1

20 A600 V234 mOhmsN - Channel 5 V- 55 C+ 150 C252 WThrough HoleTO - 247G - 3TubeSi1 Channel30 V45 nCEnhancement Prestomos
SIHFPS40N50L-GE3


MOSFET 500V N-CH
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Vishay 0
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AUD 7.1951

Multiples of: 1

46 A500 V100 mOhmsN - Channel 5 V- 55 C+ 150 C540 WThrough HoleSUPER - 247 - 3TubeSi1 Channel- 30 V , + 30 V380 nCEnhancement  
IPQC60R040S7AXTMA1


MOSFETs Y
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Infineon 0
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AUD 7.1971

Multiples of: 750

14 A600 V40 mOhmsN - Channel 4.5 V- 40 C+ 150 C272 WSMD/SMTHDSOP - 22Reel , Cut TapeSi1 Channel- 20 V , + 20 V83 nCEnhancement CoolMOS
FQB47P06TM-AM002


MOSFET 60V P-Channel QFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 7.1991

Multiples of: 1

- 47 A- 60 V21 mOhmsP - Channel  - 55 C+ 175 C3.75 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel25 V Enhancement Qfet
NTE2929


Transistor: N-MOSFET; 900V; 5A; TO220F
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NTE 0
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AUD 7.2

Multiples of: 1

                   
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