MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPL60R285P7


MOSFET LOW POWER_NEW
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 2
Ships to you
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AUD 7.0391
Multiples of: 1

                   
NTE2935


Transistor: N-MOSFET; 500V; 6.5A; TO3PML
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NTE 0
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AUD 7.0286
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SIHB065N60E-T1-GE3


MOSFETs N-CH 650V TO263 E SERIES TECH
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Vishay 0
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AUD 7.0338
Multiples of: 1

           Reel , Cut TapeSi      
2SJ607-AZ


Trans MOSFET P-CH 60V 83A Automotive 3-Pin(3+Tab) TO-220 Isolated
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Renesas 0
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AUD 7.0363
Multiples of: 1

83 A  p    1.5 Wthrough hole      enhancement  
STB20N90K5


MOSFET N-channel 900 V, 0.24 Ohm typ., 20 A MDmesh K5 Power MOSFET in a D2PAK package
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STMicroelectronics 0
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AUD 7.0496
Multiples of: 1000

20 A900 V210 mOhmsn - channel 3 V- 55 C+ 150 C250 Wsmd/smtTO - 263 - 3 si1 channel30 V40 nCenhancement  
SIHP33N60EF-GE3


Vishay Semiconductors MOSFET 600V 98mOhms10V 33A N-Ch MOSFET
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Vishay 0
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AUD 7.0577
Multiples of: 1

33 A600 V98 mOhmsN - Channel20 V2 V- 55 C+ 150 C278 WThrough HoleTO - 220 - 3TubeSi  155 nC  Ef Series
SIHG125N65E-GE3


MOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.12 10V
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Vishay 0
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AUD 7.0592
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27 A650 V120 mOhmsN - Channel 5 V- 55 C+ 150 C208 WThrough HoleTO - 247AC - 3TubeSi1 Channel- 30 V , + 30 V38 nCEnhancement  
TPH9R00CQH,LQ


MOSFETs
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Toshiba 0
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AUD 7.0768
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IPZ60R125P6FKSA1


MOSFET HIGH POWER_PRICE/PERFORM
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Infineon 0
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AUD 7.0783
Multiples of: 1

 600 V       Through HoleTO - 247 - 4TubeSi     Coolmos
IPB65R065C7


MOSFET N-Ch 700V 145A D2PAK-2
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
6 to 16 Weeks Calender.png

AUD 7.0783
Multiples of: 1

33 A650 V58 mOhmsN - Channel 3 V- 55 C+ 150 C171 WSmd/SmtTO - 263 - 3Cut TapeSi1 Channel20 V64 nCEnhancement Coolmos
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