MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
R6020ENZ1C9


MOSFET 10V Drive Nch MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 436
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AUD 8.4561
Multiples of: 5

20 A600 V170 mOhmsn - channel 2 V- 55 C+ 150 C120 Wthrough holeTO - 247 - 3Bulksi1 channel20 V60 nCenhancement  
AUIRFP4110


MOSFET N-CHANNEL 100+
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Infineon 8
Ships to you
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AUD 17.2748
Multiples of: 1

120 A100 V3.7 mOhmsN - Channel 2 V- 55 C+ 175 C370 WThrough HoleTO - 247AC - 3TubeSi1 Channel+/- 20 V210 nCEnhancementAec - Q101 
FQP12N60C


N-Channel 600 V 12A (Tc) 225W (Tc) Through Hole TO-220-3
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ON Semiconductor 3
Ships to you
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AUD 6.3425
Multiples of: 1

12 A600 V650 mOhmsN - Channel30 V - 55 C+ 150 C225 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V Enhancement  
IXTH26P20P


MOSFET -26.0 Amps -200V 0.170 Rds
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IXYS 0
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AUD 6.3384
Multiples of: 30

26 A200 V170 mOhmsp - channel  - 55 C+ 175 C300 Wthrough holeTO - 247 - 3Tubesi1 channel20 V enhancement  
IXTQ32N65X


MOSFET 650V/9A Power MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

IXYS 0
6 to 16 Weeks Calender.png

AUD 6.3486
Multiples of: 1

32 A650 V135 mOhmsn - channel 3 V- 55 C+ 150 C500 Wthrough holeTO - 3P - 3Tubesi1 channel30 V54 nCenhancement hiperfet
SSW47N60SFD


TO-247-3 MOSFETs ROHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Super Semiconductor 0
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AUD 6.3489
Multiples of: 1

                   
FCP36N60N


MOSFET 600V NChannel MOSFET SupreMOS
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ON Semiconductor 0
6 to 16 Weeks Calender.png

AUD 6.3582
Multiples of: 1000

36 A600 V90 mOhmsn - channel 4 V- 55 C+ 150 C312 Wthrough holeTO - 220Tubesi1 channel30 V86 nC  supremos
AOK18N65L


MOSFET N-CH 650V 18A TO247
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Alpha & Omega 0
6 to 16 Weeks Calender.png

AUD 6.36
Multiples of: 240

           -       
BUK7509-75A,127


Trans MOSFET N-CH 75V 75A Automotive 3-Pin(3+Tab) TO-220AB Rail
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

NXP 0
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AUD 6.3643
Multiples of: 1

                   
R6030JNZC17


MOSFET 600V 30A TO-3PF, PrestoMOS™ with integrated high-speed diode
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 0
6 to 16 Weeks Calender.png

AUD 6.3643
Multiples of: 300

30 A600 V143 mOhmsN - Channel 7 V- 55 C+ 150 C93 WThrough HoleTO - 3PF - 3TubeSi1 Channel- 30 V , + 30 V74 nCEnhancement  
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