MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NTMFS4H01NFT1G


MOSFET N Trench 25V 54A 2.1V @ 250uA 0.7 mΩ @ 30A,10V SO8-FL RoHS
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ON Semiconductor 1
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AUD 6.4281
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RJK60S7DPP-E0#T2


Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220FP Tube
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Renesas 0
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AUD 6.4257
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30 A  n     through hole Rail/Tube    enhancement  
NVBLS1D1N08H


MOSFET T8-80V IN TOLL
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ON Semiconductor 0
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AUD 6.4286
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           Cut Tape       
SD214DE


MOSFET
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Vishay 0
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AUD 6.435
Multiples of: 5

50 mA20 V N - Channel40 V - 55 C+ 125 C300 mWSmd/SmtTO - 206AF - 4     Enhancement  
SD215DE


MOSFET
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Vishay 0
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AUD 6.435
Multiples of: 5

50 mA20 V45000 mOhmsN - Channel- 30 V - 55 C+ 125 C300 mWSmd/SmtTO - 206AF - 4     Enhancement  
TK35A65W5,S5X


N-Channel 650 V 35A (Ta) 50W (Tc) Through Hole TO-220SIS
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Toshiba 0
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AUD 6.435
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35 A650 V80 mOhmsN - Channel 3 V- 55 C+ 150 C50 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V115 nCEnhancement  
IXFH18N60P


MOSFET 600V 18A
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IXYS 0
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AUD 6.4429
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18 A600 V400 mOhmsN - Channel  - 55 C+ 150 C360 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V Enhancement Hiperfet
AUIRF2903ZSTRL


MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms
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Infineon 0
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AUD 6.4552
Multiples of: 800

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IR3575MTRPBF


MOSFET 60A exposed top Intg PowIRstage
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Infineon 0
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AUD 6.4579
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         smd/smtPQFN - 30Reelsi      
NTE2945


Transistor: N-MOSFET; 400V; 53.5A; TO220F
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NTE 0
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AUD 6.4615
Multiples of: 1

                   
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