MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIHP080N60E-GE3


MOSFET N-CHANNEL 600V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
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AUD 6.4698
Multiples of: 1

35 A600 V80 mOhmsN - Channel 5 V- 55 C+ 150 C227 WThrough HoleTO - 220 - 3TubeSi1 Channel- 30 V , 30 V42 nCEnhancement  
SIHH21N65EF-T1-GE3


MOSFET 650V Vds -/+ 30V Vgs 0.157 Rds(On) @10V
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Vishay 0
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AUD 6.4739
Multiples of: 3000

19.8 A650 V180 mOhmsn - channel 2 V- 55 C+ 150 C156 Wsmd/smtPOWERPAK - 4Reelsi1 channel+/- 30 V68 nCenhancement trenchfet
TK31E60W,S1VX


Toshiba MOSFET N-Ch 30.8A 290W FET 600V 3000pF 86nC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Toshiba 0
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AUD 6.4777
Multiples of: 1

30.8 A600 V73 mOhmsn - channel 2.7 v to 3.7 V- 55 C+ 150 C230 Wthrough holeTO - 220 - 3Reelsi1 channel30 V86 nCenhancement dtmosiv
NTE2943


Transistor: N-MOSFET; 100V; 17A; TO220F
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NTE 0
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AUD 6.4971
Multiples of: 1

                   
AUIRFS3004


MOSFET 40V 340A 1.75 mOhm Automotive MOSFET
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Infineon 0
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AUD 6.4971
Multiples of: 1

340 A40 V1.4 mOhmsN - Channel   + 175 C380 WSmd/SmtTO - 252 - 3TubeSi1 Channel20 V160 nC Aec - Q101 
R6035ENZ1C9


N-Channel 600 V 35A (Tc) 120W (Tc) Through Hole TO-247
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ROHM 0
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AUD 6.4982
Multiples of: 1

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IPW60R090CFD7XKSA1


MOSFET HIGH POWER_NEW
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Infineon 0
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AUD 6.5
Multiples of: 1

25 A600 V90 mOhmsN - Channel 3.5 V- 55 C+ 150 C125 WThrough HoleTO - 247 - 3TubeSi1 Channel20 V51 nCEnhancement  
TK35A65W,S5X


Trans MOSFET N-CH 650V 35A 3-Pin TO-220SIS
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Toshiba 0
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AUD 6.5
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35 A650 V68 mOhmsN - Channel 3.5 V- 55 C+ 150 C50 WThrough HoleTO - 220FP - 3 Si1 Channel30 V100 nCEnhancement  
FMP20N60S1


MOSFET, N-CH, 600V, 20A, TO-220AB-3
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AUD 6.504
Multiples of: 1

   n channel               
IXTQ86N20T


MOSFET 86 Amps 200V 29 Rds
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IXYS 0
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AUD 6.5057
Multiples of: 300

86 A200 V29 mOhmsn - channel 5 V- 55 C+ 175 C480 Wthrough holeTO - 3P - 3Tubesi1 channel30 V90 nCenhancement hiperfet
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First...53815382538353845385...

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