MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFSL3006PBF


MOSFET MOSFT 60V 270A 2.5mOhm 200nC
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Infineon 1
Ships to you
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AUD 10.9427
Multiples of: 1

270 A60 V2 mOhmsn - channel    375 Wthrough holeTO - 262Tubesi1 channel20 V200 nC   
BUK9Y12-55B


Trans MOSFET N-CH 55V 61.8A Automotive 5-Pin(4+Tab) LFPAK
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NXP 0
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AUD 6.55
Multiples of: 1

   n     surface mount Tape And Reel    enhancement  
SIHP38N60E-GE3


MOSFET 600V Vds 30V Vgs TO-220AB
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Vishay 0
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AUD 6.5577
Multiples of: 1

43 A600 V56 mOhmsN - Channel 4 V- 55 C+ 150 C313 WThrough HoleTO - 220AB - 3TubeSi1 Channel30 V122 nCEnhancement  
AUIRLS3034-7P


MOSFET Auto 40V Sngl N-Ch HEXFET PowerMOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 0
6 to 16 Weeks Calender.png

AUD 6.5589
Multiples of: 1

380 A40 V1.7 mOhmsn - channel   + 175 C380 Wsmd/smtTO - 263 - 7Tubesi1 channel20 V120 nC aec - q101 
WMJ53N60C2


Transistor: N-MOSFET; SJ-MOSFET C2; unipolar; 600V; 53A; 378W
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Wayon 0
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AUD 6.56
Multiples of: 1

            Sj - Mosfet C2      
ALD114804PCL


MOSFET Quad EPAD(R) N-Ch
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Advanced Linear Devices 0
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AUD 6.5672
Multiples of: 50

12 mA10 V500 Ohmsn - channel 440 mV0 C+ 70 C500 mW (1/2 w)through holePDIP - 16Tubesi4 channel10.6 V depletion  
STB32N65M5


Transistor: N-MOSFET; unipolar; 650V; 15A; 150W; D2PAK
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STMicroelectronics 0
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AUD 6.5684
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            supermesh      
IXTQ30N50P


MOSFET 30.0 Amps 500 V 0.2 Ohm Rds
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IXYS 0
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AUD 6.5692
Multiples of: 1

30 A500 V165 mOhmsn - channel 5 V- 55 C+ 150 C460 Wthrough holeTO - 3P - 3Tubesi1 channel30 V70 nCenhancement polarhv
IXFQ28N60P3


MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET
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IXYS 0
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AUD 6.5712
Multiples of: 1

28 A600 V260 mOhmsn - channel 5 V  695 Wthrough holeTO - 3P - 3Tubesi1 channel30 V50 nC  hiperfet
SiHG33N65E-GE3


MOSFET 650V Vds -/+30V Vgs Rds(on) @10V 0.105
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Vishay 0
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AUD 6.5723
Multiples of: 1

32.4 A700 V90 mOhmsN - Channel 4 V- 55 C+ 150 C313 WThrough HoleTO - 247 - 3ReelSi1 Channel30 V115 nCEnhancement Trenchfet
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First...53815382538353845385...

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