MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFB42N20DPBF


International Rectifier MOSFET 200V SINGLE N-CH 55mOhms 91nC
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Infineon 52
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AUD 3.9516
Multiples of: 1

44 A200 V55 mOhmsN - Channel30 V5.5 V- 55 C+ 175 C2.4 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V91 nCEnhancement  
STB38N65M5


MOSFET N-Ch 650V 0.076 Ohm 30 A MDmesh V
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STMicroelectronics 0
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AUD 6.2605
Multiples of: 1000

30 A650 V95 mOhmsn - channel 3 V- 55 C+ 150 C190 Wsmd/smtD2PAKReelsi1 channel25 V71 nCenhancement mdmesh
SIHP125N65E-GE3


MOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.12 10V
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Vishay 0
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AUD 6.2631
Multiples of: 1

27 A650 V120 mOhmsN - Channel 5 V- 55 C+ 150 C208 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 30 V , + 30 V38 nCEnhancement  
IPP80N08S2L-07


Infineon Technologies MOSFET N-Ch 75V 80A TO220-3 OptiMOS
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Infineon 0
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AUD 6.2677
Multiples of: 1

80 A75 V5.1 mOhmsn - channel 1.2 V- 55 C+ 175 C300 Wthrough holeTO - 220 - 3-si1 channel20 V233 nCenhancementaec - q101optimos
SCT10N120H


MOSFET Silicon carbide Power MOSFET 1200 V 12 A 520 mOhm
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STMicroelectronics 0
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AUD 6.2743
Multiples of: 1

           Cut Tape       
SIHA22N60AE-GE3


MOSFET N-CHANNEL 600V
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Vishay 0
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AUD 6.275
Multiples of: 1

20 A600 V180 mOhmsN - Channel 4 V- 55 C+ 150 C33 WThrough HoleTO - 220FP - 3Cut Tape , ReelSi1 Channel- 30 V , + 30 V48 nCEnhancement  
SD214DE


SD214 Series 20 V 50 mA High-Speed Analog N-Channel DMOS FETs - TO-72
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Calogic 0
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AUD 6.279
Multiples of: 1

                   
IRF630R


MOSFET TO-220AB N-Ch Power
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Generic 0
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AUD 6.2796
Multiples of: 1

   n - channel     through holeTO - 220 - 3        
SIHB125N65E-GE3


MOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.12 10V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Vishay 0
6 to 16 Weeks Calender.png

AUD 6.2808
Multiples of: 1

27 A650 V120 mOhmsN - Channel 5 V- 55 C+ 150 C208 WSMD/SMTD2PAK - 3TubeSi1 Channel- 30 V , + 30 V38 nCEnhancement  
SIHH100N60E-T1-GE3


MOSFET 650V Vds; 30V Vgs PowerPAK 8x8
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Vishay 0
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AUD 6.2854
Multiples of: 1

28 A600 V100 mOhmsN - Channel 3 V- 55 C+ 150 C174 WSmd/SmtPOWERPAK - 4Cut TapeSi1 Channel30 V53 nCEnhancement  
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