MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STWA57N65M5


STMicroelectronics MOSFET N-Ch 650 V 0.056 Ohm 42 A Mdmesh
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

STMicroelectronics 65
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AUD 8.2956
Multiples of: 1

42 A650 V56 mOhmsN - Channel 4 V- 55 C+ 150 C250 WThrough HoleTO - 247 - 3TubeSi1 Channel25 V98 nCEnhancement Mdmesh
IPA60R099C6


Infineon Technologies MOSFET N-Ch 600V 38A TO220FP-3 CoolMOS C6
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Infineon 0
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AUD 6.2985
Multiples of: 1

37.9 A600 V99 mOhmsn - channel 3 V- 55 C+ 150 C35 Wthrough holeTO - 220 - 3Tubesi1 channel20 V119 nCenhancement coolmos
NTE2389


Transistor: N-MOSFET; 60V; 38A; TO220
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NTE 0
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AUD 6.3086
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IPI65R110CFDXKSA1


Transistor: N-MOSFET; unipolar; 650V; 31.2A; 277.8W; PG-TO262-3
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Infineon 0
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AUD 6.3104
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            Coolmos      
TK31V60W5,LVQ(S


Transistor: N-MOSFET; unipolar; 600V; 30.8A; 240W; DFN 8x8mm
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Toshiba 0
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AUD 6.3108
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IPAW60R190CEXKSA1


600V 26.7A 34W 190mO@9.5A,10V N Channel TO-220-FP MOSFETs ROHS
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Infineon 0
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AUD 6.3111
Multiples of: 1

26.7 A600 V440 mOhmsn - channel 2.5 V- 40 C+ 150 C176 Wthrough holeTO - 220 - 3Tubesi1 channel+/- 20 V63 nCenhancement coolmos
STP36N60M6


MOSFET N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh M6 Power MOSFET in a TO-220 package
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STMicroelectronics 0
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AUD 6.3138
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30 A600 V85 mOhmsN - Channel 3.25 V- 55 C+ 150 C208 WThrough HoleTO - 220 - 3TubeSi1 Channel- 25 V , 25 V44.3 nCEnhancement MDmesh
IPA030N10N3 G


MOSFET N-Ch 100V 79A TO220FP-3 OptiMOS 3
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Infineon 0
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AUD 6.3162
Multiples of: 500

79 A100 V3 mOhmsn - channel  - 55 C+ 175 C41 Wthrough holeTO - 220 - 3 FPTubesi1 channel20 V47 nCenhancement optimos
SIHH125N65E-T1-GE3


MOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.12 10V
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Vishay 0
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AUD 6.3162
Multiples of: 1

25 A650 V120 mOhmsN - Channel 5 V- 55 C+ 150 C174 WSMD/SMTPOWERPAK - 8X8Reel , Cut TapeSi1 Channel- 30 V , + 30 V38 nCEnhancement  
SIHK085N60EF-T1GE3


MOSFETs 600Vds 30V Vgs PowerPAK 10 x 12
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Vishay 0
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AUD 6.3162
Multiples of: 1

30 A600 V85 mOhmsN - Channel 5 V- 55 C+ 150 C184 WSMD/SMTPOWERPAK - 8TubeSi1 Channel- 30 V , + 30 V42 nCEnhancement  
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