MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IPB60R099C6


Transistor: N-MOSFET; unipolar; 600V; 37.9A; 278W; PG-TO263-3
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Infineon 27
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AUD 8.3104
Multiples of: 1

            Coolmos C6      
SIHP068N60EF-GE3


N-Channel 600V 41A (Tc) 250W (Tc) Through Hole TO-220AB
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Vishay 0
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AUD 4.4905
Multiples of: 1

41 A600 V68 mOhmsN - Channel 5 V- 55 C+ 150 C250 WThrough Hole  Si1 Channel- 30 V , 30 V51 nCEnhancement  
SIHB065N60E-GE3


MOSFET 650V Vds; 30V Vgs D2PAK TO-263
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Vishay 0
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AUD 4.4925
Multiples of: 1

40 A600 V65 mOhmsN - Channel 3 V- 55 C+ 150 C250 WSMD/SMTD2PAK - 3 (TO - 263 - 3)TubeSi1 Channel- 30 V , 30 V74 nCEnhancement  
CSD19506KCS


N-Channel 80 V 100A (Ta) 375W (Tc) Through Hole TO-220-3
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Texas Instruments 0
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AUD 4.4928
Multiples of: 200

200 A80 V2.3 mOhmsN - Channel 2.5 V- 55 C+ 175 C375 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V120 nC  Nexfet
STWA40N60M2


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 0
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AUD 4.4943
Multiples of: 600

                   
IPB65R110CFDA


Infineon Technologies MOSFET N-Ch 650V 99.6A D2PAK-2
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Infineon 0
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AUD 4.4943
Multiples of: 1000

31.2 A650 V99 mOhmsn - channel 3.5 V- 40 C+ 150 C277.8 Wsmd/smtTO - 263 - 3Reelsi1 channel20 V118 nCenhancement coolmos
FDB0250N807L


MOSFET 80V TO263 7L JEDEC GREEN EMC
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ON Semiconductor 0
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AUD 4.4943
Multiples of: 800

240 A80 V6 mOhmsn - channel 2 V- 55 C+ 150 C214 Wsmd/smtTO - 263 - 7Reelsi1 channel+/- 20 V143 nCenhancement  
IPB100N06S2-05


MOSFET N-Ch 55V 100A D2PAK-2 OptiMOS
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Infineon 0
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AUD 4.4952
Multiples of: 1

100 A55 V4.7 mOhmsn - channel  - 55 C+ 175 C300 Wsmd/smtTO - 252 - 3Reelsi1 channel20 V enhancement optimos
ALD810017SCL


Advanced Linear Devices MOSFET Quad SAB MOSFET ARRAY VT=1.70V
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Advanced Linear Devices 0
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AUD 4.4963
Multiples of: 50

80 mA10.6 V13 GOhmsn - channel 1.68 V0 C+ 70 C500 mWsmd/smtSOIC - 16Tubesi4 channel10.6 V enhancement  
ALD810018SCL


Advanced Linear Devices MOSFET Quad SAB MOSFET ARRAY VT=1.80V
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Advanced Linear Devices 0
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AUD 4.4963
Multiples of: 1

80 mA10.6 V14 GOhmsn - channel 1.78 V0 C+ 70 C500 mWsmd/smtSOIC - 16Tubesi4 channel10.6 V enhancement  
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