MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
STFW8N120K5


MOSFET PTD HIGH VOLTAGE
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STMicroelectronics 391
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AUD 4.4687
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CI60N120SM


1200V 60A 40mΩ@40V,20A 330W 2.6V@10mA 10pF@1000V N Channel 1.893nF@1000V 115nC@800V -55℃~+150℃@(Tj) TO-247-3 MOSFETs ROHS
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Tokmas 287
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AUD 4.4652
Multiples of: 1

                   
LSB55R066GT


MOSFET N Channel 550V 45A(Tc) 4.5V @ 250uA 66mO @ 22.5A,10V TO-247 RoHS
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Lonten Semiconductor 0
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AUD 4.467
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RDX080N50FU6


N-Channel 500 V 8A (Ta) 40W (Tc) Through Hole TO-220FM
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ROHM 0
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AUD 4.4713
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8 A500 V650 mOhmsn - channel 4 V  40 Wthrough holeTO - 220 - 3Bulksi  28 nC   
TK25N60X-VB


600V 25A 120m@10V 4.5V 1 N-Channel TO-247 MOSFETs ROHS
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VBsemi Elec 0
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AUD 4.4724
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STH185N10F3-2


STMicroelectronics MOSFET
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STMicroelectronics 0
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AUD 4.4743
Multiples of: 1

180 A100 V4.5 mOhmsn - channel 2 V- 55 C+ 175 C315 Wsmd/smtH2PAK - 2Reelsi1 channel20 V114.6 nCenhancementaec - q101stripfet
SIHB105N60EF-GE3


MOSFET EF Series Pwr MOSFET wFast Body Diode
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Vishay 0
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AUD 4.475
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29 A600 V102 mOhmsN - Channel 5 V- 55 C+ 150 C208 WSMD/SMT Cut Tape , Reel , ReelSi1 Channel- 30 V , + 30 V35 nCEnhancement  
STWA48N60DM2


MOSFET N-channel 600 V, 0.065 Ohm typ., 40 A MDmesh DM2 Power MOSFET in a TO-247 long leads package
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STMicroelectronics 0
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AUD 4.4766
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40 A600 V65 mOhmsN - Channel 3 V- 55 C+ 150 C300 WThrough HoleTO - 247 - 3 Si1 Channel25 V70 nCEnhancement Mdmesh
ALD110908SAL


MOSFET Dual EPAD(R) N-Ch
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Advanced Linear Devices 0
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AUD 4.4776
Multiples of: 50

12 mA10 V500 Ohmsn - channel  0 C+ 70 C500 mW (1/2 w)smd/smtSOIC - 8Tubesi2 channel10.6 V depletion  
FCPF22N60NT


MOSFET 600V N-Channel SupreMOS
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ON Semiconductor 0
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AUD 4.4776
Multiples of: 1

22 A600 V140 mOhmsn - channel  - 55 C+ 150 C39 Wthrough holeTO - 220FTubesi1 channel30 V enhancement supremos
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