MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
2SK2586(E)


Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-3P Magazine
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Renesas 0
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AUD 4.5002

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60 A  n    125 Wthrough hole Magazine    enhancement  
FHA50N50A


New Quadratic Unclassified Data TO-3PN RoHS
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FeiHong 0
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AUD 4.5038

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NVMFS5C404NLWFAFT1G


MOSFET T6 40V HEFET
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ON Semiconductor 0
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AUD 4.5086

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370 A40 V520 uOhmsN - Channel 1.2 V- 55 C+ 175 C200 WSmd/SmtSO - FL - 8Cut TapeSi1 Channel20 V181 nCEnhancementAec - Q101 
R6020JNXC7G


MOSFET NCH 600V 20A POWER
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ROHM 0
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AUD 4.51

Multiples of: 1000

20 A600 V234 mOhmsN - Channel 5 V- 55 C+ 150 C76 WThrough HoleTO - 220FM - 3TubeSi1 Channel30 V45 nCEnhancement Prestomos
IPI60R165CPAKSA1


Transistor: N-MOSFET; unipolar; 600V; 21A; 192W; PG-TO262-3
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Infineon 0
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AUD 4.5134

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            Coolmos Cp      
NTE2996


Transistor: N-MOSFET; 60V; 84A; TO220
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NTE 0
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AUD 4.519

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TK25V60X,LQ


Trans MOSFET N-CH 600V 25A 8-Pin DFN
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Toshiba 0
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AUD 4.5192

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         Smd/SmtDFN8X8 - 5ReelSi      
SIHH180N60E-T1-GE3


MOSFET 600V Vds 30V Vgs PowerPAK 8 x 8
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Vishay 0
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AUD 4.5192

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19 A600 V180 mOhmsN - Channel 3 V- 55 C+ 150 C114 WSmd/SmtPOWERPAK - 8X8 - 4Cut TapeSi1 Channel30 V33 nCEnhancement  
SIHH186N60EF-T1GE3


MOSFET EF Series Power MOSFET With Fast Body Diode
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Vishay 0
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AUD 4.5192

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           Cut Tape       
IPP100N04S303AKSA1


MOSFET MOSFET_(20V 40V)
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Infineon 0
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AUD 4.5192

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