MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTA130N10T


IXYS MOSFET 130 Amps 100V 8.5 Rds
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IXYS 0
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AUD 4.5446

Multiples of: 1

130 A100 V8.5 mOhmsn - channel  - 55 C+ 175 C360 Wsmd/smtTO - 252 - 3Tubesi1 channel  enhancement  
WMK220N20HG3


Transistor: N-MOSFET; unipolar; TO220-3
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Wayon 0
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AUD 4.5446

Multiples of: 1

                   
IPL65R165CFDAUMA1


Transistor: N-MOSFET; unipolar; 650V; 21.3A; 195W; PG-VSON-4
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Infineon 0
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AUD 4.545

Multiples of: 1

            coolmos      
SPA20N60CFDXKSA1


MOSFET HIGH POWER_LEGACY
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Infineon 0
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AUD 4.5491

Multiples of: 126

   N Channel      TO - 220FP - 3Tube       
SQD40N10-25_GE3


MOSFET 100V 40A 136W AEC-Q101 Qualified
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Vishay 0
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AUD 4.5493

Multiples of: 2000

40 A100 V19 mOhmsN - Channel 1.5 V- 55 C+ 175 C136 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , 20 V70 nCEnhancementAEC - Q101 
IRFR9220TR


MOSFET RECOMMENDED ALT 844-IRFR9220TRPBF
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Vishay 0
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AUD 4.55

Multiples of: 1

           -       
BUK9K13-60RAX


MOSFET BUK9K13-60RA/SOT1205/LFPAK56D
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Nexperia 0
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AUD 4.5564

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TK31E60X,S1X


Toshiba MOSFET DTMOSIV-High Speed 600V 88m (VGS=10V)
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Toshiba 0
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AUD 4.5571

Multiples of: 50

7.7 A600 V73 mOhmsN - Channel 3.5 V- 55 C+ 150 C230 WThrough HoleTO - 220 - 3 Si1 Channel30 V65 nCEnhancement Dtmosiv
ALD110900SAL


MOSFET Dual EPAD(R) N-Ch
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

Advanced Linear Devices 0
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AUD 4.5571

Multiples of: 50

12 mA10 V500 Ohms , 500 Ohmsn - channel 20 mV0 C+ 70 C500 mWsmd/smtSOIC - 8Tubesi2 channel10.6 V depletion  
IAUTN06S5N008GATMA1


MOSFETs N
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Infineon 0
6 to 16 Weeks Calender.png

AUD 4.5571

Multiples of: 1

           Reel , Cut TapeSi    AEC - Q101OptiMOS
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