MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IXTA3N100P


MOSFET 3 Amps 1000V 4.8 Rds
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AUD 4.4786
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3 A1 kV4.8 Ohmsn - channel  - 55 C+ 150 C125 Wsmd/smtTO - 263 - 3Tubesi1 channel20 V enhancement  
MCB220N15Y-TP


MOSFETs
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AUD 4.4786
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220 A150 V6.5 mOhmsN - Channel 4 V- 55 C+ 150 C312.5 WSMD/SMTD2PAK - 3Reel , Cut TapeSi1 Channel- 20 V , + 20 V155 nCEnhancement  
MCW105N60FH-BP


MOSFETs N-CHANNEL MOSFET,TO-247
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AUD 4.4786
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30.6 A600 V105 mOhmsN - Channel 5 V- 55 C+ 155 C240 WThrough HoleTO - 247 - 3BulkSi1 Channel- 30 V , + 30 V57 nCEnhancement  
MCW075N60FH-BP


MOSFETs N-CHANNEL MOSFET,TO-247
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AUD 4.4786
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41 A600 V75 mOhmsN - Channel 5 V- 55 C+ 150 C312.5 WThrough HoleTO - 247 - 3BulkSi1 Channel- 30 V , + 30 V81 nCEnhancement  
RS3G160ATTB1


MOSFET Pch -40V -16A Power MOSFET
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AUD 4.4811
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BUK7514-55A,127


Trans MOSFET N-CH 55V 73A Automotive 3-Pin(3+Tab) TO-220AB Rail
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AUD 4.4815
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PTF27N80


MOSFET TO-247 RoHS
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AUD 4.4824
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SIHH155N60EF-T1GE3


MOSFETs EF Series Power MOSFET With Fast Body Diode PowerPAK 8x8, 155 mohm a. 10V
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AUD 4.4862
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18 A600 V136 mOhmsN - Channel 5 V- 55 C+ 150 C156 WSMD/SMTPOWERPAK - 4Reel , Cut TapeSi1 Channel- 30 V , + 30 V25 nCEnhancement  
SIHK155N60EF-T1GE3


MOSFETs EF Series Power MOSFET With Fast Body Diode PowerPAK 10 x 12, 155 mohm a. 10V
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AUD 4.4862
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18 A600 V136 mOhmsN - Channel 5 V- 55 C+ 150 C156 WSMD/SMTPOWERPAK - 8Reel , Cut TapeSi1 Channel- 30 V , + 30 V25 nCEnhancement  
SIHB080N60E-GE3


MOSFETs E Series Power MOSFET, 80mO 10V
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AUD 4.4862
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35 A600 V80 mOhmsN - Channel 5 V- 55 C+ 150 C227 WSMD/SMTD2PAK - 3 (TO - 263 - 3)TubeSi1 Channel- 30 V , + 30 V63 nCEnhancement  
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