MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TP2520N8-G


Transistor: P-MOSFET; unipolar; -200V; -0.75A; 1.6W; SOT89-3
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Microchip 3948
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AUD 1.6582
Multiples of: 1

260 mA200 V12 OhmsP - Channel  - 55 C+ 150 C1.6 WSmd/SmtSOT - 89 (TO - 243AA)ReelSi1 Channel20 V Enhancement  
DMN3051LDM-7


Diodes Incorporated MOSFET 30V 4A N-CHANNEL
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Diodes Incorporated 3941
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AUD 0.2216
Multiples of: 1

4 A30 V64 mOhmsN - Channel  - 55 C+ 150 C900 mWSmd/SmtSOT - 26 - 6ReelSi1 Channel20 V Enhancement  
NVD5C478NT4G


MOSFET T6 40V DPAK EXP
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ON Semiconductor 3939
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AUD 1.1345
Multiples of: 1

           Cut Tape       
DMN6040SVTQ-7


MOSFET 60V Dual N-Ch FET 40mOhm 10V 5.0A
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Diodes Incorporated 3935
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AUD 0.2955
Multiples of: 1

   N - Channel     Smd/SmtTSOT - 26 - 6Cut TapeSi2 Channel   Aec - Q101 
IRF820PBF-BE3


MOSFET 500V N-CH MOSFET
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Vishay 3934
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AUD 0.8638
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2.5 A500 V3 OhmsN - Channel 4 V- 55 C+ 150 C50 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V24 nCEnhancement  
IRF8721TRPBF


MOSFET N Trench 30V 14A 2.35V @ 25uA 8.5 mΩ @ 14A,10V SOIC-8_150mil RoHS
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Infineon 3933
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AUD 0.4732
Multiples of: 1

            Hexfet®      
FCH070N60E


Fairchild Semiconductor MOSFET
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ON Semiconductor 3928
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AUD 7.2181
Multiples of: 450

52 A600 V70 mOhmsN - Channel 2.5 V- 55 C+ 150 C481 WThrough HoleTO - 247 - 3ReelSi1 Channel+/- 20 v , +/- 30 V128 nCEnhancement Superfet Ii
BSC120N12LSGATMA1


MOSFET TRENCH >=100V
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Infineon 3926
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AUD 1.4859
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           Cut Tape       
DMN3035LWN-7


Diodes Incorporated MOSFET N-Ch 30V Dual Enh 30Vgss 0.77W 399pF
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Diodes Incorporated 2910
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AUD 0.2618
Multiples of: 3000

5.5 A , 5.5 A30 v , 30 V45 mOhms , 45 mOhmsN - Channel 1 v , 1 V- 55 C+ 150 C1.78 WSmd/SmtV - DFN - 3020 - 8Reel-2 Channel+/- 20 v , +/- 20 V9.9 nC , 9.9 nCEnhancement  
NCE2304


MOSFET N Trench 30V 3.6A 2.2V @ 250uA 58 mΩ @ 3.6A,10A SOT-23 RoHS
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NCE Power 2774
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AUD 0.0389
Multiples of: 20

                   
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