MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FS3404 A4LA


30V 5.8A 24mΩ@10V,5A 1500mW 3V@250uA N Channel 540pF@15V -55℃~+150℃@(Tj) SOT-23-3L MOSFETs ROHS
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FOSAN 6906
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AUD 0.0314
Multiples of: 20

                   
SIRA10DDP-T1-GE3


MOSFETs 30V Vds TrenchFET PowePAK SO-8
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Vishay 4114
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AUD 0.3431
Multiples of: 1

96 A30 V3.1 mOhmsN - Channel 2.4 V- 55 C+ 150 C43 WSMD/SMTSO - 8Reel , Cut TapeSi1 Channel- 16 V , + 20 V24.1 nCEnhancement  
ISZ065N03L5SATMA1


30V 6.5mO@20A,10V N Channel TSDSON-8-FL MOSFETs ROHS
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Infineon 4114
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AUD 0.3333
Multiples of: 1

           Cut Tape       
DMC2700UDMQ-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 4113
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AUD 0.1625
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1.34 A , 1.14 A20 V300 mOhms , 500 mOhmsN - Channel, P - Channel 500 mV- 55 C+ 150 C1.12 W   Si2 Channel4.5 V736.6 pC , 622.4 pCEnhancementAec - Q101 
IAUAN04S7N005AUMA1


MOSFETs N
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Infineon 4109
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AUD 2.5776
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455 A40 V510 uOhmsN - Channel 3 V- 55 C+ 175 C198 WSMD/SMTHSOF - 5 - 1Reel , Cut TapeSi1 Channel- 20 V , + 20 V110 nCEnhancement OptiMOS
FDS8958A


SOIC-8 MOSFETs ROHS
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TECH PUBLIC 4049
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AUD 0.2108
Multiples of: 5

                   
IRFZ46NPBF


MOSFET N Trench 55V 53A 4V @ 250uA 16.5 mΩ @ 28A,10V TO-220 (TO-220-3) RoHS
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Infineon 3989
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AUD 0.4121
Multiples of: 1

            Hexfet®      
FDS4685


SOP-8 MOSFETs ROHS
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TECH PUBLIC 3947
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AUD 0.2629
Multiples of: 5

                   
NCE0202M


200V 2A 520mΩ@10V,2A 1.5W 1.8V@250uA N Channel SOT-89-3 MOSFETs ROHS
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NCE Power 2440
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AUD 0.2273
Multiples of: 1

                   
IRLR024NTR


60V 30A 25m@10V,10A 44W 1 N-Channel TO-252 MOSFETs ROHS
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Minos 1741
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AUD 0.1425
Multiples of: 5

                   
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