MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SUD50P04-08-GE3


MOSFET 40V 50A P-CH MOSFET
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Vishay 3990
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AUD 1.2096
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50 A40 V8.1 mOhmsP - Channel 2.5 V- 55 C+ 150 C73.5 WSmd/SmtTO - 252ReelSi1 Channel20 V159 nCEnhancement Trenchfet
IRFIZ24NPBF


Transistor: N-MOSFET; unipolar; 55V; 13A; 26W; TO220FP
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Infineon 3962
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AUD 0.8537
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13 A55 V70 mOhmsN - Channel    26 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel20 V13.3 nC   
PSMN0R9-25YLDX


MOSFET PSMN0R9-25YLD/LFPAK/REEL 7" Q1
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Nexperia 3959
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AUD 1.3742
Multiples of: 1

300 A25 V720 uOhmsN - Channel 1.2 V- 55 C+ 175 C238 WSmd/SmtLFPAK56 - 5ReelSi1 Channel20 V89.8 nCEnhancement  
RU1C001UNTCL


ROHM Semiconductor MOSFET
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ROHM 3957
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AUD 0.0258
Multiples of: 20

100 mA20 V2.5 OhmsN - Channel 300 mV- 55 C+ 150 C150 mWSmd/SmtSOT - 323FL - 3ReelSi1 Channel8 V Enhancement  
LMTL2N02


SOT-23 MOSFETs ROHS
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Leiditech 3957
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AUD 0.0488
Multiples of: 10

                   
ZXMN6A08KTC


Diodes Incorporated MOSFET 60V N-Channel MOSFET 20V VGS 24.3A IDM
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Diodes Incorporated 3955
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AUD 0.3546
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7.9 A60 V150 mOhmsN - Channel 1 V- 55 C+ 150 C4.13 WSmd/SmtTO - 252 - 2ReelSi1 Channel20 V5.8 nCEnhancement  
PMPB27EP,115


MOSFET PMPB27EP/SOT1220/REEL7
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Nexperia 3953
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AUD 0.4504
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- 8.8 A- 30 V24 mOhmsP - Channel - 1.5 V- 55 C+ 150 C12.5 WSmd/SmtDfn2020md - 6Reel   30 nCEnhancement  
IPB64N25S3-20


MOSFET Infineon MOSFETs
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Infineon 3946
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AUD 5.1552
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64 A250 V17.5 mOhmsN - Channel 2 V- 55 C+ 175 C300 WSmd/SmtTO - 263ReelSi1 Channel20 V89 nCEnhancementAec - Q101 
DMN13H750S-7


Diodes Incorporated MOSFET N-Ch Enh Mode FET 130Vdss 20Vgss
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Diodes Incorporated 3894
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AUD 0.2218
Multiples of: 5

1 A130 V410 mOhmsN - Channel 2 V- 55 C+ 150 C1.26 WSmd/SmtSOT - 23 - 3ReelSi1 Channel20 V5.6 nCEnhancement  
IST006N04NM6AUMA1


MOSFET TRENCH <= 40V
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Infineon 3754
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AUD 2.2
Multiples of: 1

475 A40 V600 uOhmsN - Channel 2.1 V- 55 C+ 175 C250 WSMD/SMTSTOLL - 6Reel , Cut TapeSi1 Channel- 10 V , + 10 V127 nCEnhancement OptiMOS
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