MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FQU2N90TU_AM002


Fairchild Semiconductor MOSFET 900V 1.6A 7.8Ohm N-Channel
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ON Semiconductor 4159
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AUD 0.9966
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1.7 A900 V7.2 OhmsN - Channel     Through HoleIPAK - 3TubeSi1 Channel    Qfet
ZXMS6005DT8TA


Diodes Incorporated MOSFET 60V N-Ch Intellifet 200mohm 1.8A 210mJ
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Diodes Incorporated 4157
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AUD 1.5416
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1.8 A60 V200 mOhmsN - Channel 700 mV- 40 C+ 125 C2.13 WSmd/SmtSM - 8ReelSi2 Channel5 V Enhancement Intellifet
DI280N10TL


MOSFETs MOSFET, TOLL, 100V, 280A, 175C, N
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Diotec 4155
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AUD 2.4463
Multiples of: 1

280 A100 V2 mOhmsN - Channel 2.3 V- 55 C+ 175 C425 WSMD/SMTHSOF - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V122 nCEnhancement  
MOT4733J


40V 15A 25W 25m@10V,15A 2.5V@250uA 1PCSPChannel PDFN3x3 MOSFETs ROHS
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MOT 4117
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AUD 0.1306
Multiples of: 5

                   
DMN2065UW-7


Diodes Incorporated MOSFET MOSFET BVDSS: 8V-24V 8V-24V SOT323 T&R 3K
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Diodes Incorporated 4111
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AUD 0.156
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3.1 A20 V140 mOhmsN - Channel12 V1 V- 55 C+ 150 C700 mWSmd/SmtSOT - 323 - 3ReelSi1 Channel4.5 V5.4 nCEnhancement  
NSH045N100P5


100V 120A 4.5m@10V,50A 3V@250uA 1PCSNChannel PDFN5x6 MOSFETs ROHS
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NH 4100
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AUD 0.6097
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RQ3L070BGTB1


MOSFETs NCH 60V 20A, HSMT8G
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ROHM 4091
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AUD 0.6075
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20 A60 V24.7 mOhmsN - Channel 2.5 V- 55 C+ 150 C15 WSMD/SMTH SMT - 8GReel , Cut TapeSi1 Channel- 20 V , + 20 V7.6 nCEnhancement  
IRF510PBF-BE3


N-Channel 100V 5.6A (Tc) 43W (Tc) Through Hole TO-220AB
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Vishay 3969
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AUD 0.5779
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5.6 A100 V540 mOhmsN - Channel 4 V- 55 C+ 175 C43 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V8.3 nCEnhancement  
UF07P15G-AE3-R


MOSFET P Trench 150V 700mA 4V @ 250uA 3.1 Ω @ 500mA,10V SOT-23 RoHS
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Unisonic 2546
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AUD 0.0887
Multiples of: 5

                   
IRF6712STRPBF


N-Channel 25 V 17A (Ta), 68A (Tc) 2.2W (Ta), 36W (Tc) Surface Mount DIRECTFET™ SQ
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Infineon 1518
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AUD 1.2267
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17 A25 V6.7 mOhmsN - Channel20 V1.9 V- 40 C+ 150 C2.2 WSmd/SmtDirectfetReelSi1 Channel20 V12 nC  Directfet
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