MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vgs - Gate-Source Breakdown Voltage
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDN352AP


SOT-23 MOSFETs ROHS
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TECH PUBLIC 4219
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AUD 0.1066
Multiples of: 5

                   
IXTA96P085T


MOSFET -96 Amps -85V 0.013 Rds
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IXYS 4011
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AUD 5.3358
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96 A85 V13 mOhmsP - Channel 2 V- 55 C+ 150 C298 WSmd/SmtTO - 263AA - 3TubeSi1 Channel10 V180 nCEnhancement  
5N10-HXY


100V 5A 1.5W 98mΩ@10V,3A N Channel SOT-23-3L MOSFETs ROHS
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HXY MOS 4006
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AUD 0.0445
Multiples of: 10

                   
DMN601DWK-7


MOSFET Dual N-Channel
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Diodes Incorporated 4006
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AUD 0.0665
Multiples of: 10

800 mA60 V3 OhmsN - Channel  - 65 C+ 150 C200 mWSmd/SmtSOT - 363 - 6ReelSi2 Channel20 V Enhancement  
PSMNR60-25YLHX


MOSFET 25V N-CHANNEL LOGIC LEVEL
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Nexperia 4004
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AUD 1.5449
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300 A25 V700 uOhmsN - Channel 2.2 V- 55 C+ 175 C268 WSMD/SMTLFPAK - 56 - 4Cut Tape , Reel , ReelSi1 Channel- 20 V , + 20 V43 nCEnhancement  
AUN060N08AG


80V 60A 74W 6m 2.95V DFN-8(5x6) MOSFETs ROHS
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ANHI 3999
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AUD 0.408
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KCY3310A


PDFNWB-8L-EP(5x6) MOSFETs ROHS
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KIA 3997
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AUD 0.6424
Multiples of: 1

                   
IRL530NSTRLPBF


Transistor: N-MOSFET; unipolar; 100V; 17A; 3.8W; D2PAK
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Infineon 3940
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AUD 0.8422
Multiples of: 1

17 A100 V150 mOhmsN - Channel    3.8 WSmd/SmtD2PAKReelSi1 Channel20 V22.7 nC   
DMTH10H010SPSQ-13


MOSFET MOSFET BVDSS: 61V~100V PowerDI5060-8 T&R 2.5K
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Diodes Incorporated 3802
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AUD 1.2806
Multiples of: 1

100 A100 V8.8 mOhmsN - Channel 2 V- 55 C+ 175 C166 WSmd/SmtPowerdi5060 - 8Cut TapeSi1 Channel20 V56.4 nCEnhancementAec - Q101 
DMN4010LFG-7


MOSFET 40 N-Ch Enh FET 31V to 99V 1810pF
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Diodes Incorporated 2042
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AUD 0.3513
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11.5 A40 V12 mOhmsN - Channel20 V1 v to 3 V- 55 C+ 150 C2.45 WSmd/SmtPowerdi3333 - 8ReelSi1 Channel20 V17 nCEnhancement Dmn401
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