MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Id - Continuous Drain Current
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Vds - Drain-Source Breakdown Voltage
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Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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Vgs - Gate-Source Voltage
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Qg - Gate Charge
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRFI740GLCPBF


N-Channel 400 V 5.7A (Tc) 40W (Tc) Through Hole TO-220-3
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Vishay 4688
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AUD 3.1762
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   N - Channel  - 55 C+ 150 C Through HoleTO - 220 - 3 FPTube       
MCG40N10YHE3-TP


MOSFETs
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Micro Commercial Components (MCC) 4687
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AUD 0.5867
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40 A100 V17 mOhmsN - Channel 1.8 V- 55 C+ 150 C43 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V16 nCEnhancement  
BSC600N25NS3 G


Infineon Technologies MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3
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Infineon 4687
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AUD 2.5317
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25 A250 V60 mOhmsN - Channel20 V3 V- 55 C+ 150 C125 WSmd/SmtTDSON - 8ReelSi1 Channel20 V22 nCEnhancement Optimos
SL90P03G


PDFN3x3-8L MOSFETs ROHS
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SLKORMICRO 4685
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AUD 0.1049
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HYG210P06LQ1C2


PPAK5*6-8L MOSFETs ROHS
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HuaYi 4685
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AUD 0.2606
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RD3R02BBHTL1


MOSFETs RD3R02BBH is a power MOSFET with low on-resistance and high power package, suitable for switching.
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ROHM 4685
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AUD 1.3567
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20 A150 V81 mOhmsN - Channel 4 V- 55 C+ 150 C50 WSMD/SMTTO - 252 - 2Reel , Cut TapeSi1 Channel- 20 V , + 20 V12.4 nCEnhancement  
STP601D


60V 30A 20mΩ@10V,20A 60W 3V@250uA P Channel TO-252-2 MOSFETs ROHS
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STANSON Tech 4683
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AUD 0.253
Multiples of: 5

                   
BSC070N10NS3 G


Infineon Technologies MOSFET N-Ch 100V 90A TDSON-8 OptiMOS 3
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Infineon 4683
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AUD 1.0371
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90 A100 V7 mOhmsN - Channel 2 V- 55 C+ 150 C114 WSmd/SmtTDSON - 8ReelSi1 Channel20 V55 nCEnhancement Optimos
RD3L07BBGTL1


MOSFETs RD3L07BBG is a power MOSFET with low on - resistance, suitable for switching.
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ROHM 4683
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AUD 2.3746
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115 A60 V3.9 mOhmsN - Channel 2.5 V- 55 C+ 150 C102 WSMD/SMTDPAK - 3 (TO - 252 - 3)Reel , Cut TapeSi1 Channel- 20 V , + 20 V47 nCEnhancement  
RQ6A050ZPTR


MOSFET PCH -12V -5A SMALL SIGNAL
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ROHM 4682
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AUD 0.5308
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5 A12 V26 mOhmsP - Channel 300 mV- 55 C+ 150 C1.25 WSmd/SmtSOT - 457T - 6Cut TapeSi1 Channel10 V35 nCEnhancement  
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