MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
IRF7313TRPBFXTMA1


MOSFETs PLANAR 40<-<100V
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Infineon 9499
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AUD 0.4154
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6.5 A30 V29 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSMD/SMTSO - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V22 nCEnhancement  
BSC060P03NS3E G


MOSFET P-Ch -30V -100A TDSON-8 OptiMOS P3
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Infineon 5399
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AUD 0.5631
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100 A30 V6 mOhmsp - channel  - 55 C+ 150 C83 Wsmd/smtTDSON - 8Reelsi1 channel25 V61 nC  optimos
WSP4800


SOP-8 MOSFETs ROHS
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Winsok 4056
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AUD 0.238
Multiples of: 5

                   
RJK005N03T146


N-Channel 30 V 500mA (Ta) 200mW (Ta) Surface Mount SMT3
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ROHM 4054
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AUD 0.0671
Multiples of: 5

500 mA30 V650 mOhmsN - Channel    200 mWSmd/SmtSMT - 3ReelSi1 Channel12 V Enhancement  
IAUZ20N08S5L300ATMA1


MOSFET MOSFET_(75V 120V(
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Infineon 4052
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AUD 0.6298
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20 A80 V30 mOhmsN - Channel 2 V- 55 C+ 175 C30 WSmd/SmtPG - TSDSON - 8TubeSi1 Channel20 V8.1 nCEnhancement  
IRF9Z34PBF-BE3


P-Channel 60V 18A (Tc) 88W (Tc) Through Hole TO-220AB
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Vishay 4049
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AUD 1.2155
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18 A60 V140 mOhmsP - Channel 4 V- 55 C+ 175 C88 WThrough HoleTO - 220AB - 3TubeSi1 Channel- 20 V , + 20 V34 nCEnhancement  
WSF50P04


40V 40A 12mΩ@10V,12A 80W P Channel TO-252-3 MOSFETs ROHS
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Winsok 4047
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AUD 0.507
Multiples of: 1

                   
DI100N10PQ-AQ


MOSFETs MOSFET, PowerQFN 5x6, 100V, 80A, 150C, N, AEC-Q101
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Diotec 4041
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AUD 1.6369
Multiples of: 1

100 A100 V4.5 mOhmsN - Channel 2.4 V- 55 C+ 150 C50 WSMD/SMTTDSON - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V75 nCEnhancementAEC - Q101 
Hot DMN2005UFG-7


MOSFET 20V N-Ch Enh FET 6495pF 66.8nC
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Diodes Incorporated 3427
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AUD 0.3103
Multiples of: 1

24.1 A20 V8.7 mOhmsN - Channel 0.7 V- 55 C+ 150 C2.27 WSmd/SmtPowerdi3333 - 8ReelSi1 Channel4.5 V68.8 nCEnhancement  
IPD90N04S405ATMA1


MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2
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Infineon 1630
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AUD 0.5451
Multiples of: 1

86 A40 V4.3 mOhmsN - Channel 2 V- 55 C+ 175 C65 WSmd/SmtTO - 252 - 3Cut TapeSi1 Channel20 V37 nCEnhancementAec - Q101 
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