MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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Vds - Drain-Source Breakdown Voltage
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Vgs - Gate-Source Breakdown Voltage
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Vgs th - Gate-Source Threshold Voltage
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Pd - Power Dissipation
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
DMP1055UFDB-7


MOSFET MOSFET BVDSS: 8V-24V
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Diodes Incorporated 4035
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AUD 0.3201
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HSCC8233


MOSFET DoubleNChannelCommon Drain -20V 11A 1V @ 250uA 7.2mΩ @ 5.5A,4.5V DFN2*3 RoHS
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HUASHUO 4027
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AUD 0.2673
Multiples of: 5

                   
TT8M1TR


ROHM Semiconductor MOSFET
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ROHM 4023
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AUD 0.2463
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2.5 A20 V52 mOhms , 49 mOhmsN - Channel, P - Channel 300 mV , 1 V- 55 C+ 150 C1.25 WSmd/SmtTSST - 8Cut TapeSi2 Channel10 V3.6 nC , 12 nCEnhancement  
AOD4130


60V 35A 25mO@10V,35A N Channel TO-252 MOSFETs ROHS
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VBsemi Elec 4023
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AUD 0.4139
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DMN1029UFDB-7


MOSFET 20V N-Ch Enh Mode 8Vgs 914pF 10.5nC
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Diodes Incorporated 4013
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AUD 0.1855
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5.6 A12 V29 mOhmsN - Channel 400 mV- 55 C+ 150 C1.4 WSmd/SmtU - DFN2020 - B - 6Cut TapeSi2 Channel4.5 V10.5 nCEnhancement  
ZXMP6A17E6TA


SOT23-6 MOSFETs ROHS
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TECH PUBLIC 4012
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AUD 0.1896
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IXFH26N50P


N-Channel 500 V 26A (Tc) 400W (Tc) Through Hole TO-247AD (IXFH)
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IXYS 3972
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AUD 6.6821
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26 A500 V230 mOhmsN - Channel  - 55 C+ 150 C400 WThrough HoleTO - 247 - 3TubeSi1 Channel30 V Enhancement Hiperfet
AON6407


MOSFET P Trench 30V 32A 2.6V @ 250uA 4.5 mΩ @ 20A,10V DFN 5x6 RoHS
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Alpha & Omega 3646
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AUD 0.5299
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DMP6050SPS-13


MOSFET MOSFET BVDSS: 41V-60V
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Diodes Incorporated 3435
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AUD 0.4318
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26 A60 V50 mOhmsP - Channel 3 V- 55 C+ 150 C2.4 WSmd/SmtPowerdi5060 - 8Cut TapeSi1 Channel20 V30 nCEnhancement  
IPD5N25S3-430


Infineon Technologies MOSFET N-Ch 250V 5A DPAK-2
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Infineon 2611
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AUD 0.8504
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5 A250 V430 mOhmsn - channel 3 V- 55 C+ 175 C41 Wsmd/smtPG - TO - 252 - 3Cut Tapesi1 channel10 V4.7 nCenhancementaec - q101 
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