MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FDPF190N15A


Fairchild Semiconductor MOSFET 150V NCHAN PwrTrench
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ON Semiconductor 9
Ships to you
between Wed. 30 Sep to Mon. 05 Oct Calender.png

AUD 6.3336
Multiples of: 1

27.4 A150 V14.7 mOhmsN - Channel  - 55 C+ 150 C33 WThrough HoleTO - 220 - 3TubeSi     Powertrench
IST019N08NM5AUMA1


MOSFET TRENCH 40<-<100V
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Infineon 0
6 to 16 Weeks Calender.png

AUD 2.5457
Multiples of: 1

290 A80 V1.9 OhmsN - Channel 3.8 V- 55 C+ 175 C313 WSMD/SMT Reel , Cut TapeSi1 Channel- 20 V , + 20 V94 nCEnhancement  
BUK761R7-40E,118


MOSFET N-channel TrenchMOS standard level FET
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Nexperia 0
6 to 16 Weeks Calender.png

AUD 2.5457
Multiples of: 4800

120 A40 V1.32 mOhmsn - channel20 V3 V- 55 C+ 175 C324 Wsmd/smtSOT - 404 - 3Reelsi1 channel20 V118 nCenhancement  
SQM120N04-1m9_GE3


MOSFET 40V 120A 300W AEC-Q101 Qualified
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Vishay 0
6 to 16 Weeks Calender.png

AUD 2.5457
Multiples of: 800

120 A40 V1.9 mOhmsn - channel 3 V- 55 C+ 175 C300 Wsmd/smtTO - 263 - 3Reelsi1 channel20 V180 nCenhancementaec - q101trenchfet
IRFR024N


Trans MOSFET N-CH 55V 17A 3-Pin(2+Tab) DPAK
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Infineon 0
6 to 16 Weeks Calender.png

AUD 2.5457
Multiples of: 1

                   
TK17E80W,S1X


MOSFET N-Ch 800V 2050pF 32nC 17A 180W
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Toshiba 0
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AUD 2.5461
Multiples of: 1

17 A800 V250 mOhmsN - Channel 3 V + 150 C180 WThrough HoleTO - 220 - 3 Si1 Channel20 V32 nCEnhancement Dtmosiv
TK110A65Z,S4X


N-Channel 650V 24A (Ta) 45W (Tc) Through Hole TO-220SIS
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Toshiba 0
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AUD 2.5472
Multiples of: 1

24 A650 V110 mOhmsN - Channel 4 V- 55 C+ 150 C45 WThrough HoleTO - 220 - 3TubeSi1 Channel- 30 V , + 30 V40 nCEnhancement  
IXTA1R4N100P


MOSFET 1.4 Amps 1000V 11 Rds
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IXYS 0
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AUD 2.5479
Multiples of: 1

1.4 A1 kV11 OhmsN - Channel  - 55 C+ 150 C63 WSmd/SmtTO - 263 - 3TubeSi1 Channel20 V Enhancement  
IXTY8N70X2


MOSFET 700V/8A Ultra Junct X2-Class MOSFET
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IXYS 0
6 to 16 Weeks Calender.png

AUD 2.5479
Multiples of: 1

8 A700 V500 mOhmsN - Channel 3 V- 55 C+ 150 C150 WSmd/SmtTO - 252 - 3TubeSi1 Channel30 V12 nCEnhancement Hiperfet
WMK26N60FD


Transistor: N-MOSFET; SJ-MOSFET FD; unipolar; 600V; 20A; 147W
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Wayon 0
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AUD 2.5493
Multiples of: 1

            Sj - Mosfet Fd      
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