MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SI7459DP-T1-E3


MOSFET 30V 22A 5.4W 6.8mohm @ 10V
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 2.56
Multiples of: 1

13 A- 30 V6.8 mOhmsp - channel25 V - 55 C+ 150 C1.9 Wsmd/smtSO - 8Reel    enhancement  
SI7178DP-T1-GE3


MOSFET 100V 60A 104W 14mohm @ 10V
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AUD 2.5607
Multiples of: 1

   N - Channel  - 55 C+ 150 C Smd/SmtPOWERPAK SO - 8Reel       
IPP60R160C6


MOSFET N-Ch 600V 23.8A TO220-3 CoolMOS C6
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AUD 2.5614
Multiples of: 1

23.8 A600 V140 mOhmsN - Channel 2.5 V- 55 C+ 150 C176 WThrough HoleTO - 220 - 3 FPTubeSi1 Channel20 V75 nCEnhancement Coolmos
IQDH29NE2LM5ATMA1


MOSFETs N
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AUD 2.5614
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789 A25 V290 uOhmsN - Channel 2 V- 55 C+ 150 C278 WSMD/SMTTSON - 8Reel , Cut TapeSi1 Channel- 16 V , + 16 V88 nCEnhancement  
IQDH29NE2LM5CGATMA1


MOSFETs N
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AUD 2.5614
Multiples of: 1

789 A25 V290 uOhmsN - Channel 2 V- 55 C+ 150 C333 WSMD/SMTTTFN - 9Reel , Cut TapeSi1 Channel- 16 V , + 16 V88 nCEnhancement OptiMOS
SIR106ADP-T1-RE3


MOSFET N-CHANNEL 100V PowerPAK SO-8
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AUD 2.5615
Multiples of: 1

65.8 A100 V8 mOhmsN - Channel 4 V- 55 C+ 150 C83.3 WSmd/SmtPOWERPAK SO - 8Cut TapeSi1 Channel10 V26.5 nC , 34.5 nCEnhancement Trenchfet
IPW65R420CFDFKSA1


MOSFET LOW POWER_LEGACY
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AUD 2.5631
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         Through HoleTO - 247 - 3TubeSi     Coolmos
TK2R9E10PL,S1X


MOSFET Power MOSFET ID=240A VDSS=100V
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AUD 2.5644
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240 A100 V2.4 mOhmsN - Channel    306 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V83 nC , 161 nCEnhancement  
SIE868DF-T1-GE3


Trans MOSFET N-CH 40V 35A 10-Pin PolarPAK T/R
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AUD 2.5651
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           Tape And Reel    enhancement  
SUP70040E-GE3


MOSFET ThunderFET Vds 100V Rds(On) 0.0040 @10V
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AUD 2.4554
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120 A100 V4 mOhmsN - Channel 4 V- 55 C+ 175 C375 WThrough HoleTO - 220 - 3TubeSi1 Channel20 V76 nCEnhancement Trenchfet
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First...51065107510851095110...

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