MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
FCP099N65S3


MOSFET SuperFET3 650V 99 mOhm,TO220 PKG
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 772
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between Wed. 30 Sep to Mon. 05 Oct
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AUD 2.526

Multiples of: 1

30 A650 V79 mOhmsN - Channel 2.5 V- 55 C+ 150 C227 WThrough HoleTO - 220 - 3 Si1 Channel30 V61 nCEnhancement  
FDMC007N08LCDC


MOSFET FET 80V 64A 6.8 mOhm
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 9
Ships to you
between Wed. 30 Sep to Mon. 05 Oct
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AUD 4.7402

Multiples of: 1

64 A80 V6.8 mOhmsN - Channel 1 V- 55 C+ 150 C57 WSmd/SmtPQFN - 8Cut TapeSi1 Channel20 V44 nCEnhancement  
AUIRFR540Z


MOSFET Automotive MOSFET 1 100V, 26 mOhm, DPAK
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Infineon 5
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between Wed. 30 Sep to Mon. 05 Oct
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AUD 2.5299

Multiples of: 1

35 A100 V22.5 mOhmsN - Channel     Smd/SmtTO - 252 - 3TubeSi    Aec - Q101 
TSM3N80CP ROG


Transistor: N-MOSFET; unipolar; 800V; 1.83A; 94W; DPAK
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Taiwan Semiconductor 0
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AUD 2.5265

Multiples of: 1

                   
BUK9M9R5-40H


Nexperia
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Nexperia 0
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AUD 2.5272

Multiples of: 1

                   
TPP65R160C


650V 20A 140mO@10V,10A 151W N Channel TO-220 MOSFETs ROHS
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UNIGROUP 0
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AUD 2.5273

Multiples of: 1

                   
LSC65R125HT


MOSFET N Channel 650V 25A(Tc) 4.5V @ 250uA 125mO @ 12.5A,10V TO-220 RoHS
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Lonten Semiconductor 0
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AUD 2.5273

Multiples of: 1

                   
IRL3705NSPBF


MOSFET 55V 1 N-CH HEXFET 10mOhms 65.3nC
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Infineon 0
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AUD 2.5291

Multiples of: 50

89 A55 V10 mOhmsN - Channel 2 V- 55 C+ 175 C170 WSmd/SmtD2PAKTubeSi1 Channel16 V65.3 nCEnhancement  
SIHB17N80AE-GE3


MOSFET 800V N-CHANNEL
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Vishay 0
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AUD 2.5315

Multiples of: 1

15 A800 V250 mOhmsN - Channel 4 V- 55 C+ 155 C179 WSMD/SMTD2PAK - 3 (TO - 263 - 3)TubeSi1 Channel- 30 V , 30 V41 nCEnhancement  
SUM110N04-2M1P-E3


Vishay Semiconductors MOSFET 40V 110A 312W 2.1mohm 10V
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Vishay 0
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AUD 2.5332

Multiples of: 1

29 A40 V2.1 mOhmsn - channel20 V2.5 V- 55 C+ 150 C3.13 Wsmd/smtD2PAK - 3Reelsi  240 nCenhancement trenchfet
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