MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
AUIRF3805STRL


MOSFET AUTO 55V 1 N-CH HEXFET 8mOhms
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

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AUD 2.5332

Multiples of: 1

44 A55 V8 mOhmsn - channel20 V - 55 C+ 175 C300 Wsmd/smtD - PAK - 3Reel    enhancement  
IRF1503SPBF


Transistor: N-MOSFET; unipolar; 30V; 190A; 200W; D2PAK
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AUD 2.5339

Multiples of: 1

190 A30 V3.3 mOhmsN - Channel20 V - 55 C+ 175 C200 WSmd/SmtD - PAK - 3Tube   130 nCEnhancement  
SLW24N50C


MOSFET TO-3P RoHS
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Maplesemi 0
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AUD 2.535

Multiples of: 1

                   
IPW65R310CFD


MOSFET CoolMOS 650V 310mOhm CFD2 N-Chan MOSFET
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AUD 2.5365

Multiples of: 264

11.4 A650 V310 mOhmsN - Channel 4 V  104.2 WThrough HoleTO - 247TubeSi1 Channel30 V41 nC  Coolmos
BSB013NE2LXIXUMA1


Transistor: N-MOSFET; unipolar; 25V; 103A; 57W
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AUD 2.5375

Multiples of: 1

            Optimos      
SIHA21N80AE-GE3


MOSFET 800V N-CHANNEL
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AUD 2.5375

Multiples of: 1

7.5 A800 V205 mOhmsN - Channel 4 V- 55 C+ 155 C33 WThrough HoleTO - 220 - 3TubeSi1 Channel- 30 V , + 30 V48 nCEnhancement  
IPB80N06S2-09


MOSFET OptiMOS PWR TRANST 55V 80A
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AUD 2.5385

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80 A55 V9.1 mOhmsn - channel  - 55 C+ 175 C190 Wsmd/smtTO - 263Reelsi1 channel20 V enhancement  
SQJQ100EL-T1_GE3


MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified
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AUD 2.5392

Multiples of: 1

160 A40 V900 uOhmsN - Channel 1.5 V- 55 C+ 175 C136 WSmd/SmtPOWERPAK - 8X8L - 4Cut TapeSi1 Channel20 V220 nCEnhancementAec - Q101Trenchfet
SPB16N50C3


MOSFET COOL MOS N-CH 650V 20.7A
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AUD 2.54

Multiples of: 1

16 A500 V280 mOhmsn - channel  - 55 C+ 150 C160 Wsmd/smtTO - 263Reelsi1 channel20 V enhancement coolmos
NTE312


Transistor: N-JFET; 30V; TO92
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AUD 2.54

Multiples of: 1

                   
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