MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SIA456DJ-T1-GE3


MOSFET 200V 2.6A 19W 1.38ohm @ 4.5V
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Vishay 0
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AUD 0.6135

Multiples of: 1

2.6 A200 V1.38 OhmsN - Channel 600 mV- 55 C+ 150 C19 WSmd/SmtSC - 70ReelSi1 Channel4.5 V5 nCEnhancement Trenchfet, Powerpak
HY1906C2


60V 70A 5.7m@10V,20A 57.7W 3V@250uA 1PCSNChannel DFN-8(5.8x5.9) MOSFETs ROHS
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HuaYi 0
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AUD 0.6135

Multiples of: 1

                   
IRFU220BTU_AM002


Fairchild Semiconductor MOSFET N-Ch 200V 4.6A 0.8OHM
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ON Semiconductor 0
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AUD 0.6138

Multiples of: 5040

4.6 A200 V800 mOhmsN - Channel30 V - 55 C+ 150 C2.5 WThrough HoleIPAK - 3TubeSi1 Channel30 V    
SH8M2TB1


MOSFET Nch+Pch 30V/-30V 3.5A/-3.5A; MOSFET
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ROHM 0
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AUD 0.6138

Multiples of: 2500

3.5 A30 V107 mOhmsn and p - channel   + 150 C2 Wsmd/smtSOP - 8Reelsi2 channel     
FDD5810_F085


Fairchild Semiconductor MOSFET LOW VOLTAGE
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ON Semiconductor 0
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AUD 0.6142

Multiples of: 1

7.7 A60 V48 mOhmsn - channel  - 55 C+ 175 C88 Wsmd/smtDPAK - 3Reelsi1 channel20 V enhancement powertrench
NVTFS5C658NLWFTAG


MOSFET AFSM T6 60V LL U8FL WF
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ON Semiconductor 0
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AUD 0.6142

Multiples of: 1

109 A60 V4.2 mOhmsN - Channel 1.2 V- 55 C+ 175 C114 WSmd/SmtWDFN - 8Cut TapeSi1 Channel20 V27 nCEnhancementAec - Q101 
BSP324


MOSFET TRANSISTOR
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Infineon 0
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AUD 0.6143

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   N Channel               
DMT616MLSS-13


MOSFETs MOSFET BVDSS: 31V-40V
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Diodes Incorporated 0
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AUD 0.6143

Multiples of: 1

                   
PJQ5546-AU_R2_002A1


MOSFETs 40V N-Channel Enhancement Mode MOSFET
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Panjit 0
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AUD 0.6144

Multiples of: 1

85 A40 V5.3 mOhmsN - Channel 2.3 V- 55 C+ 175 C68 WSMD/SMTDFN - 5060 - 8Reel , Cut TapeSi1 Channel- 20 V , + 20 V20 nCEnhancementAEC - Q101 
WSF20N20


MOSFET TO-252 RoHS
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Winsok 0
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AUD 0.6146

Multiples of: 1

                   
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