MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.

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Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
WSF20N20


MOSFET TO-252 RoHS
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Winsok 0
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AUD 0.6146

Multiples of: 1

                   
P1504EDG


40V 50A 12mO@10V,50A P Channel TO-252-3 MOSFETs ROHS
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AUD 0.6146

Multiples of: 1

                   
SM3380EHQGC-TRG


MOSFET 2 N Channel(Half Bridge) 30V 18A (Tc) 2.5V @ 250uA 10.8 mΩ @ 10A,10V DFN3x3E-8_EP2 RoHS
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Sinopower 0
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AUD 0.6146

Multiples of: 1

                   
KNP6140A


MOSFET TO-220 (TO-220-3) RoHS
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KIA 0
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AUD 0.6146

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CJAB40SN10


MOSFET N Channel 100V 40A 2.2V @ 250uA 13mO @ 12A,10V PDFNWB3.3x3.3-8L RoHS
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Changjing Electronics Technology 0
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AUD 0.6146

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NCE01P18K


MOSFET P Trench 100V 18A 3V @ 250uA 100 mΩ @ 16A,10V TO-252-2 (DPAK) RoHS
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NCE Power 0
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AUD 0.6148

Multiples of: 1

                   
ZVP2110ASTZ


Diodes Incorporated MOSFET P-Chnl 100V
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Diodes Incorporated 0
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AUD 0.6148

Multiples of: 2000

- 230 mA- 100 V8 Ohmsp - channel  - 55 C+ 150 C700 mWthrough holeTO - 92 - 3Bulksi1 channel20 V enhancement  
SI4838BDY-T1-GE3


MOSFET 12V 34A 5.7W 2.7mohm @ 4.5V
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Vishay 0
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AUD 0.615

Multiples of: 2500

   N - Channel  - 55 C+ 150 C Smd/SmtSO - 8Reel       
TPD70R600M


700V 7A 530mO@10V,3.5A 63W N Channel TO-252 MOSFETs ROHS
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UNIGROUP 0
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AUD 0.6152

Multiples of: 1

                   
NVMFD5877NLT3G


ON Semiconductor MOSFET NFET SO8FL 60V 17A 39MOHM
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ON Semiconductor 0
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AUD 0.6154

Multiples of: 1

17 A60 V39 mOhmsn - channel     smd/smtDFN - 8Reelsi2 channel   aec - q101 
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