MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
TPM2013PLS8-1


SOP-8 MOSFETs ROHS
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TECH PUBLIC 0
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AUD 0.6121
Multiples of: 1

                   
CSD25201W15


MOSFET P-Channel NexFET Pwr MOSFET
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Texas Instruments 0
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AUD 0.6122
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4 A20 V33 mOhmsp - channel  - 55 C+ 150 C1.5 Wsmd/smtWCSP - 9Reelsi1 channel- 6 V4.3 nC  nexfet
SPD30N03S2L10GBTMA1


MOSFET N-Ch 30V 30A DPAK-2
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Infineon 0
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AUD 0.6126
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30 A30 V7.8 mOhmsn - channel 1.2 V- 55 C+ 175 C100 Wsmd/smtTO - 252 - 3Cut Tapesi1 channel20 V41.8 nCenhancement optimos
FHS80N07A


New Quadratic Unclassified Data TO-263 RoHS
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FeiHong 0
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AUD 0.6127
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JCS7HN60FC-220MF


MOSFET N Trench 600V 7A (Tc) 4V @ 250uA 1.3 Ω @ 3.5A,10V TO-220MF RoHS
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Jilin 0
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AUD 0.6127
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IRFL4105PBF


MOSFET 55V 1 N-CH HEXFET 45mOhms 23nC
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Infineon 0
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AUD 0.6128
Multiples of: 80

3.7 A55 V45 mOhmsn - channel20 V - 55 C+ 150 C2.1 Wsmd/smtSOT - 223 - 3Tube   23 nCenhancement  
NTP5864NG


MOSFET NFETSO8FL60V17A39M OHM
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ON Semiconductor 0
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AUD 0.6128
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63 A60 V12.4 mOhmsn - channel  - 55 C+ 150 C107 Wthrough holeTO - 220 - 3Tubesi1 channel20 V    
LWS6010AD5


PDFN-8L(5x6) MOSFETs ROHS
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Lewa Micro 0
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AUD 0.6128
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PSMN3R2-25YLC,115


MOSFET N-Ch 25V 3.4 mOhms
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NXP 0
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AUD 0.6128
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100 A25 V3.4 mOhmsn - channel20 V1.54 V- 55 C+ 175 C79 Wsmd/smtLFPAK - 4Reel   30 nC   
WML04N65C2


Transistor: N-MOSFET; SJ-MOSFET C2; unipolar; 650V; 3A; 20W; TO220F
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Wayon 0
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AUD 0.6129
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            Sj - Mosfet C2      
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