MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
SH8KC5TB1


MOSFETs 60V 3.5A, Dual Nch+Nch, SOP8, Power MOSFET
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ROHM 0
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AUD 0.6097
Multiples of: 1

3.5 A60 V95 mOhmsN - Channel 2.5 V- 55 C+ 150 C2 WSMD/SMTSOP - 8Reel , Cut TapeSi2 Channel- 20 V , + 20 V3.1 nCEnhancement  
IRFU3806PBF


MOSFET MOSFT 60V 43A 16.2mOhm 22nC Qg
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Infineon 0
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AUD 0.6098
Multiples of: 1

43 A60 V12.6 mOhmsn - channel    71 Wthrough holeIPAKTubesi1 channel20 V22 nC   
FDMC7660S


MOSFET 30V N-Chan SyncFET PowerTrench
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This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges.

ON Semiconductor 0
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AUD 0.61
Multiples of: 3000

20 A30 V2.5 mOhmsn - channel 1.6 V  2.3 Wsmd/smtPOWER 33Reelsi1 channel20 V47 nC  syncfet
IRF8513PBF


MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
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Infineon 0
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AUD 0.61
Multiples of: 50

8 A30 V22.2 mOhmsN - Channel    1.5 WSmd/SmtSO - 8TubeSi2 Channel20 V5.7 nC   
SISA12BDN-T1-GE3


MOSFET N-CH 30-V MSFT
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Vishay 0
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AUD 0.61
Multiples of: 1

24 A30 V4.3 mOhmsN - Channel 2.4 V- 55 C+ 150 C4 WSMD/SMT Reel , Cut TapeSi1 Channel- 16 V , + 20 V10 nCEnhancement  
PSMN2R9-30MLC.115


Transistor: N-MOSFET; unipolar; 30V; 70A; 91W; LFPAK33
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Nexperia 0
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AUD 0.6101
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2SJ302-VB


60V 40A 62m@10V 1PCSPChannel TO-220 MOSFETs ROHS
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AUD 0.6103
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NTTFS4928NTAG-VB


30V 60A 4m@4.5V 1PCSNChannel DFN-8(3x3) MOSFETs ROHS
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VBsemi Elec 0
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AUD 0.6103
Multiples of: 1

                   
SIF13N50C


TO-220FP MOSFETs ROHS
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SI 0
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AUD 0.6103
Multiples of: 1

                   
IPU60R1K5CE


MOSFET CONSUMER
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AUD 0.6104
Multiples of: 1

                   
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