MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
ER1004CT


New Quadratic Unclassified Data TO-220 RoHS
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AUD 0.4658
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SM3324NHQGC-TRG


MOSFET DFN3x3D-8_EP RoHS
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AUD 0.4661
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CS100N03B8


MOSFET N Trench 30V 100A (Tc) 3V @ 250uA 5.3 mO @ 50A,10V TO-220 (TO-220-3) RoHS
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AUD 0.4661
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           Tube - Packed       
VEC2616-TL-W


MOSFET PCH+NCH 4V DRIVE SERIES
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ON Semiconductor 0
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AUD 0.4661
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3 A , - 2.5 A60 v , - 60 V116 mOhms , 194 mOhmsn - channel, p - channel 1.2 v , - 2.6 V- 55 C+ 150 C900 mWsmd/smtSOT - 28 - 8Reelsi2 channel+/- 20 v , +/- 20 V10 nC , 11 nCenhancement  
11N10-VB TO252


TO-252 MOSFETs ROHS
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AUD 0.4661
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2SK1299STL-E-VB


TO-252 MOSFETs ROHS
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AUD 0.4661
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NDD05N50ZT4G


ON Semiconductor MOSFET NFET IPAK 500V 5A 1.2OHM
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AUD 0.4662
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3 A500 V1.5 Ohmsn - channel30 V - 55 C+ 150 C83 Wsmd/smtDPAK - 3Reelsi 30 V28 nC   
DMNH6022SSD-13


MOSFETs MOSFET BVDSS: 41V-60V
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AUD 0.4662
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SH8K26GZ0TB


MOSFET 40V NCH+NCH POWER
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ROHM 0
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AUD 0.4662
Multiples of: 2500

6 A40 V38 mOhmsN - Channel 1 V- 55 C+ 150 C2 WSmd/SmtSOP - 8Cut TapeSi2 Channel12 V2.9 nCEnhancement  
STP3NK50Z


MOSFET N-channel 500 V, 2.8 Ohm typ., 2.3 A SuperMESH Power MOSFET in a TO-220 package
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STMicroelectronics 0
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AUD 0.4663
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2.3 A500 V2.8 OhmsN - Channel 3 V- 55 C+ 150 C45 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V15 nCEnhancement Supermesh
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