MOSFETs

A metal-oxide-semiconductor field-effect transistor (MOSFET) is a type of transistor used in modern electronic circuits. It is one of the most commonly used transistors, with over 5 billion shipped every year. The MOSFET is the most widely used transistor in both digital and analog circuits, due to its versatility and low cost. The MOSFET works by using an electric field to modulate the conductivity of a channel of n-type or p-type semiconductor material. The channel forms between the source and drain regions, and current flow is controlled by the voltage applied to the gate region. The gate voltage can either increase (turn the transistor "on") or decrease (turn the transistor "off") the channel conductivity, making the transistor either act as a switch or an amplifier.
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(Ex. GST)(▲▼)		Enter Qty Id - Continuous Drain CurrentVds - Drain-Source Breakdown VoltageRds On - Drain-Source ResistanceTransistor PolarityVgs - Gate-Source Breakdown VoltageVgs th - Gate-Source Threshold VoltageMinimum Operating TemperatureMaximum Operating TemperaturePd - Power DissipationMounting StylePackage / CasePackagingTechnologyNumber of ChannelsVgs - Gate-Source VoltageQg - Gate ChargeChannel ModeQualificationTradename
  
                       
NDT2955


SOT-223 MOSFETs ROHS
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TECH PUBLIC 3192
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AUD 0.4669
Multiples of: 1

                   
STP3NK50Z


MOSFET N-channel 500 V, 2.8 Ohm typ., 2.3 A SuperMESH Power MOSFET in a TO-220 package
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STMicroelectronics 0
6 to 16 Weeks Calender.png

AUD 0.4663
Multiples of: 3000

2.3 A500 V2.8 OhmsN - Channel 3 V- 55 C+ 150 C45 WThrough HoleTO - 220 - 3TubeSi1 Channel30 V15 nCEnhancement Supermesh
PSMN2R9-30MLC,115


NXP Semiconductors MOSFET N-Chan 25V 3.15mOhm
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Nexperia 0
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AUD 0.4463
Multiples of: 1

70 A30 V2.45 mOhmsN - Channel 1.45 V- 55 C+ 175 C91 WSmd/SmtLFPAK33 - 5ReelSi1 Channel20 V36.1 nCEnhancement  
CPC5602C


Trans MOSFET N-CH Si 350V 0.005A 4-Pin(3+Tab) SOT-223 Tube
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IXYS 0
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AUD 0.4663
Multiples of: 200

5 mA350 V14 Ohmsn - channel+/- 20 V - 40 C+ 85 C2.5 Wsmd/smtSOT - 223 - 3Tube    depletion  
PMV50XNEAR


MOSFET PMV50XNEA/SOT23/TO-236AB
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Nexperia 0
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AUD 0.4665
Multiples of: 5

                   
IRF7314TRPBF


MOSFET 2 P Channel (Dual) 20V 5.3A 700mV @ 250uA 58 mΩ @ 2.9A,4.5V SOIC-8_150mil RoHS
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Infineon 0
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AUD 0.4667
Multiples of: 4000

5.3 A20 V98 mOhmsP - Channel    2 WSmd/SmtSOIC - 8ReelSi2 Channel12 V19 nC   
IRF9410TRPBF


MOSFET N Trench 30V 7A 1V @ 250uA 30 mΩ @ 7A,10V SOIC-8_150mil RoHS
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Infineon 0
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AUD 0.4671
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7 A30 V50 mOhmsN - Channel    2.5 WSmd/SmtSOIC - 8ReelSi1 Channel20 V18 nC   
SW6N80


MOSFET N Trench 800V 6A (Tc) 4.5V @ 250uA 2.4 Ω @ 3A,10V TO-252 RoHS
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Sam&wing 0
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AUD 0.4671
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IRF7421D1PBF


MOSFET 20V DUAL N-CH HEXFET 35mOhms 18nC
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Infineon 0
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AUD 0.4673
Multiples of: 1

5.8 A30 V60 mOhmsn - channel  - 55 C+ 150 C2 Wsmd/smtSO - 8Tubesi2 channel20 V18 nCenhancement  
AGM12N65F


650V 12A 65W 760m@10V,6A 3.5V@250uA 1PCSNChannel TO-220F MOSFETs ROHS
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AGM-Semi 0
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AUD 0.4673
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